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Lateral P-N Junctions Based on 2 -D Materials
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| 자료유형 | E-Book |
|---|---|
| 개인저자 | Memaran, Shahriar. |
| 단체저자명 | The Florida State University. Physics. |
| 서명/저자사항 | Lateral P-N Junctions Based on 2 -D Materials. |
| 발행사항 | [S.l.] : The Florida State University., 2018 |
| 발행사항 | Ann Arbor : ProQuest Dissertations & Theses, 2018 |
| 형태사항 | 100 p. |
| 소장본 주기 | School code: 0071. |
| ISBN | 9780438306004 |
| 일반주기 |
Source: Dissertation Abstracts International, Volume: 80-01(E), Section: B.
Advisers: Luis Balicas |
| 요약 | The discovery of graphene marked a turning point in research and interest towards 2 -D materials. Among them, Transition Metal Dichalcogenides (TMDs) and Metal Monochalcogenides (MM) have seen an upturn in interest owing to their versatile prope |
| 요약 | In Chapter 1 a brief introduction of highlighted properties of the newly emerged 2 -D materials and their heterostructures is provided. |
| 요약 | Chapter 2 focuses on field-effect transistor response of few atomic layers of MoSe2, MoTe2 and WSe2. In contrast to previous reports on MoSe2 FETs electrically contacted with Ni, MoSe2 FETs electrically contacted with Ti display ambipolar behavi |
| 요약 | Chapter 3 evaluates electrostatically gated p-n junctions based on MoSe2 and the photovoltaic response of electrostatically generated p-n junctions composed of approximately 10 atomic layers of MoSe 2 stacked onto dielectric h-BN is presented. |
| 요약 | Chapter 4 presents electrical and optical characterization of monolayer and bilayer lateral heterostructures of MoS2-WS2 and MoSe2-WSe2, grown by a one-pot chemical vapor deposition (CVD) synthesis approach, using a single heterogeneous solid so |
| 일반주제명 | Condensed matter physics. |
| 언어 | 영어 |
| 기본자료 저록 | Dissertation Abstracts International80-01B(E). Dissertation Abstract International |
| 대출바로가기 | http://www.riss.kr/pdu/ddodLink.do?id=T14996981 |
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| No. | 등록번호 | 청구기호 | 소장처 | 도서상태 | 반납예정일 | 예약 | 서비스 | 매체정보 |
|---|---|---|---|---|---|---|---|---|
| 1 | WE00024479 | 530 | 가야대학교// | 대출가능 |
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