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020 ▼a 9780438306004
035 ▼a (MiAaPQ)AAI10748348
035 ▼a (MiAaPQ)fsu:14363
040 ▼a MiAaPQ ▼c MiAaPQ ▼d 248032
0491 ▼f DP
0820 ▼a 530
1001 ▼a Memaran, Shahriar. ▼0 (orcid)0000-0003-0560-5853
24510 ▼a Lateral P-N Junctions Based on 2 -D Materials.
260 ▼a [S.l.] : ▼b The Florida State University., ▼c 2018
260 1 ▼a Ann Arbor : ▼b ProQuest Dissertations & Theses, ▼c 2018
300 ▼a 100 p.
500 ▼a Source: Dissertation Abstracts International, Volume: 80-01(E), Section: B.
500 ▼a Advisers: Luis Balicas
5021 ▼a Thesis (Ph.D.)--The Florida State University, 2018.
520 ▼a The discovery of graphene marked a turning point in research and interest towards 2 -D materials. Among them, Transition Metal Dichalcogenides (TMDs) and Metal Monochalcogenides (MM) have seen an upturn in interest owing to their versatile prope
520 ▼a In Chapter 1 a brief introduction of highlighted properties of the newly emerged 2 -D materials and their heterostructures is provided.
520 ▼a Chapter 2 focuses on field-effect transistor response of few atomic layers of MoSe2, MoTe2 and WSe2. In contrast to previous reports on MoSe2 FETs electrically contacted with Ni, MoSe2 FETs electrically contacted with Ti display ambipolar behavi
520 ▼a Chapter 3 evaluates electrostatically gated p-n junctions based on MoSe2 and the photovoltaic response of electrostatically generated p-n junctions composed of approximately 10 atomic layers of MoSe 2 stacked onto dielectric h-BN is presented.
520 ▼a Chapter 4 presents electrical and optical characterization of monolayer and bilayer lateral heterostructures of MoS2-WS2 and MoSe2-WSe2, grown by a one-pot chemical vapor deposition (CVD) synthesis approach, using a single heterogeneous solid so
590 ▼a School code: 0071.
650 4 ▼a Condensed matter physics.
690 ▼a 0611
71020 ▼a The Florida State University. ▼b Physics.
7730 ▼t Dissertation Abstracts International ▼g 80-01B(E).
773 ▼t Dissertation Abstract International
790 ▼a 0071
791 ▼a Ph.D.
792 ▼a 2018
793 ▼a English
85640 ▼u http://www.riss.kr/pdu/ddodLink.do?id=T14996981 ▼n KERIS
980 ▼a 201812 ▼f 2019
990 ▼a 관리자 ▼b 관리자