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Lateral P-N Junctions Based on 2 -D Materials

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개인저자Memaran, Shahriar.
단체저자명The Florida State University. Physics.
서명/저자사항Lateral P-N Junctions Based on 2 -D Materials.
발행사항[S.l.] : The Florida State University., 2018
발행사항Ann Arbor : ProQuest Dissertations & Theses, 2018
형태사항100 p.
소장본 주기School code: 0071.
ISBN9780438306004
일반주기 Source: Dissertation Abstracts International, Volume: 80-01(E), Section: B.
Advisers: Luis Balicas
요약The discovery of graphene marked a turning point in research and interest towards 2 -D materials. Among them, Transition Metal Dichalcogenides (TMDs) and Metal Monochalcogenides (MM) have seen an upturn in interest owing to their versatile prope
요약In Chapter 1 a brief introduction of highlighted properties of the newly emerged 2 -D materials and their heterostructures is provided.
요약Chapter 2 focuses on field-effect transistor response of few atomic layers of MoSe2, MoTe2 and WSe2. In contrast to previous reports on MoSe2 FETs electrically contacted with Ni, MoSe2 FETs electrically contacted with Ti display ambipolar behavi
요약Chapter 3 evaluates electrostatically gated p-n junctions based on MoSe2 and the photovoltaic response of electrostatically generated p-n junctions composed of approximately 10 atomic layers of MoSe 2 stacked onto dielectric h-BN is presented.
요약Chapter 4 presents electrical and optical characterization of monolayer and bilayer lateral heterostructures of MoS2-WS2 and MoSe2-WSe2, grown by a one-pot chemical vapor deposition (CVD) synthesis approach, using a single heterogeneous solid so
일반주제명Condensed matter physics.
언어영어
기본자료 저록Dissertation Abstracts International80-01B(E).
Dissertation Abstract International
대출바로가기http://www.riss.kr/pdu/ddodLink.do?id=T14996981

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