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Boron Nitride Growth and Electronics
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| 자료유형 | E-Book |
|---|---|
| 개인저자 | Calderon, Brian Rene. |
| 단체저자명 | Cornell University. Electrical & Computer Engrng. |
| 서명/저자사항 | Boron Nitride Growth and Electronics. |
| 발행사항 | [S.l.] : Cornell University., 2018 |
| 발행사항 | Ann Arbor : ProQuest Dissertations & Theses, 2018 |
| 형태사항 | 154 p. |
| 소장본 주기 | School code: 0058. |
| ISBN | 9780438025462 |
| 일반주기 |
Source: Dissertation Abstracts International, Volume: 79-10(E), Section: B.
Adviser: Michael G. Spencer. |
| 요약 | With the rise of 2D materials in the past decade there has been an increasing need for an appropriate insulator within the family in order to fabricate well behaved 2D based transistors. Hexagonal Boron Nitride (hBN) has fulfilled that need by p |
| 요약 | With regards to the growth of hBN our main focus is on the popular CVD method, however, recently other methods are also underway (MBE, LPE, etc...). In this regard, hBN growth has lagged Graphene (Gr) where millimeter (mm) sized single crystals |
| 요약 | With regards to its electronic properties we report the demonstration of high mobility devices where our CVD grown hBN was used as the conductive channel. This is unprecedented in the scheme of 2D's since hBN has been widely regarded to be insul |
| 요약 | Finally, we note that our work is only the beginning of what may be an incredibly exciting field of transport in wide band-gap 2D materials since 2D GaN has also recently synthesized which possesses a bandgap similar to hBN. We are also only the |
| 일반주제명 | Electrical engineering. |
| 언어 | 영어 |
| 기본자료 저록 | Dissertation Abstracts International79-10B(E). Dissertation Abstract International |
| 대출바로가기 | http://www.riss.kr/pdu/ddodLink.do?id=T14996756 |
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| No. | 등록번호 | 청구기호 | 소장처 | 도서상태 | 반납예정일 | 예약 | 서비스 | 매체정보 |
|---|---|---|---|---|---|---|---|---|
| 1 | WE00024377 | DP 621.3 | 가야대학교/전자책서버(컴퓨터서버)/ | 대출불가(별치) |
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