| LDR | | 00000nmm u2200205 4500 |
| 001 | | 000000330050 |
| 005 | | 20241023130321 |
| 008 | | 181129s2018 ||| | | | eng d |
| 020 | |
▼a 9780438025462 |
| 035 | |
▼a (MiAaPQ)AAI10687068 |
| 035 | |
▼a (MiAaPQ)cornellgrad:10700 |
| 040 | |
▼a MiAaPQ
▼c MiAaPQ
▼d 248032 |
| 049 | 1 |
▼f DP |
| 082 | 0 |
▼a 621.3 |
| 100 | 1 |
▼a Calderon, Brian Rene.
▼0 (orcid)0000-0002-4089-8535 |
| 245 | 10 |
▼a Boron Nitride Growth and Electronics. |
| 260 | |
▼a [S.l.] :
▼b Cornell University.,
▼c 2018 |
| 260 | 1 |
▼a Ann Arbor :
▼b ProQuest Dissertations & Theses,
▼c 2018 |
| 300 | |
▼a 154 p. |
| 500 | |
▼a Source: Dissertation Abstracts International, Volume: 79-10(E), Section: B. |
| 500 | |
▼a Adviser: Michael G. Spencer. |
| 502 | 1 |
▼a Thesis (Ph.D.)--Cornell University, 2018. |
| 520 | |
▼a With the rise of 2D materials in the past decade there has been an increasing need for an appropriate insulator within the family in order to fabricate well behaved 2D based transistors. Hexagonal Boron Nitride (hBN) has fulfilled that need by p |
| 520 | |
▼a With regards to the growth of hBN our main focus is on the popular CVD method, however, recently other methods are also underway (MBE, LPE, etc...). In this regard, hBN growth has lagged Graphene (Gr) where millimeter (mm) sized single crystals |
| 520 | |
▼a With regards to its electronic properties we report the demonstration of high mobility devices where our CVD grown hBN was used as the conductive channel. This is unprecedented in the scheme of 2D's since hBN has been widely regarded to be insul |
| 520 | |
▼a Finally, we note that our work is only the beginning of what may be an incredibly exciting field of transport in wide band-gap 2D materials since 2D GaN has also recently synthesized which possesses a bandgap similar to hBN. We are also only the |
| 590 | |
▼a School code: 0058. |
| 650 | 4 |
▼a Electrical engineering. |
| 690 | |
▼a 0544 |
| 710 | 20 |
▼a Cornell University.
▼b Electrical & Computer Engrng. |
| 773 | 0 |
▼t Dissertation Abstracts International
▼g 79-10B(E). |
| 773 | |
▼t Dissertation Abstract International |
| 790 | |
▼a 0058 |
| 791 | |
▼a Ph.D. |
| 792 | |
▼a 2018 |
| 793 | |
▼a English |
| 856 | 40 |
▼u http://www.riss.kr/pdu/ddodLink.do?id=T14996756
▼n KERIS |
| 980 | |
▼a 201812
▼f 2019 |
| 990 | |
▼a 관리자
▼b 관리자 |