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Metal-semiconductor Compound Contacts to Nanoscale Transistors
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| 자료유형 | E-Book |
|---|---|
| 개인저자 | Chen, Renjie. |
| 단체저자명 | University of California, San Diego. Electrical Engineering (Applied Physics). |
| 서명/저자사항 | Metal-semiconductor Compound Contacts to Nanoscale Transistors. |
| 발행사항 | [S.l.] : University of California, San Diego., 2018 |
| 발행사항 | Ann Arbor : ProQuest Dissertations & Theses, 2018 |
| 형태사항 | 220 p. |
| 소장본 주기 | School code: 0033. |
| ISBN | 9780438168992 |
| 일반주기 |
Source: Dissertation Abstracts International, Volume: 79-12(E), Section: B.
Adviser: Shadi A. Dayeh. |
| 요약 | Semiconductor nanowires (NWs) and Fin structures are promising building blocks for next generation ultrascaled devices for electronic and optoelectronic applications. The detailed understanding of and control over the phase transformation that a |
| 요약 | In the first and the major part of this thesis, I will focus on the narrow band gap, high electron mobility III--V semiconductor, InGaAs, motivated by its potential in sub-10 nm metal-oxide-semiconductor field-effect transistors (MOSFETs). In ch |
| 요약 | In the second part, I will use the Ge/Si core/shell NW as a model system to talk about the compound contact formation in semiconductor heterostructures. In chapter 5, we managed to control the synchronous core/shell interface during the solid-st |
| 요약 | Finally, as appearing in chapter 6, I will introduce the ongoing electrical measurements of contact resistance for InGaAs transistors, and adapt the solid-phase-regrowth method to future reduce the contact resistance with locally introduced dopa |
| 일반주제명 | Electrical engineering. |
| 언어 | 영어 |
| 기본자료 저록 | Dissertation Abstracts International79-12B(E). Dissertation Abstract International |
| 대출바로가기 | http://www.riss.kr/pdu/ddodLink.do?id=T14998687 |
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| No. | 등록번호 | 청구기호 | 소장처 | 도서상태 | 반납예정일 | 예약 | 서비스 | 매체정보 |
|---|---|---|---|---|---|---|---|---|
| 1 | WE00028065 | 621.3 | 가야대학교/전자책서버(컴퓨터서버)/ | 대출가능 |
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