| LDR | | 02311nmm uu200409 4500 |
| 001 | | 000000333738 |
| 005 | | 20240805174440 |
| 008 | | 181129s2018 |||||||||||||||||c||eng d |
| 020 | |
▼a 9780438168992 |
| 035 | |
▼a (MiAaPQ)AAI10824650 |
| 035 | |
▼a (MiAaPQ)ucsd:17492 |
| 040 | |
▼a MiAaPQ
▼c MiAaPQ
▼d 248032 |
| 082 | 0 |
▼a 621.3 |
| 100 | 1 |
▼a Chen, Renjie. |
| 245 | 10 |
▼a Metal-semiconductor Compound Contacts to Nanoscale Transistors. |
| 260 | |
▼a [S.l.] :
▼b University of California, San Diego.,
▼c 2018 |
| 260 | 1 |
▼a Ann Arbor :
▼b ProQuest Dissertations & Theses,
▼c 2018 |
| 300 | |
▼a 220 p. |
| 500 | |
▼a Source: Dissertation Abstracts International, Volume: 79-12(E), Section: B. |
| 500 | |
▼a Adviser: Shadi A. Dayeh. |
| 502 | 1 |
▼a Thesis (Ph.D.)--University of California, San Diego, 2018. |
| 520 | |
▼a Semiconductor nanowires (NWs) and Fin structures are promising building blocks for next generation ultrascaled devices for electronic and optoelectronic applications. The detailed understanding of and control over the phase transformation that a |
| 520 | |
▼a In the first and the major part of this thesis, I will focus on the narrow band gap, high electron mobility III--V semiconductor, InGaAs, motivated by its potential in sub-10 nm metal-oxide-semiconductor field-effect transistors (MOSFETs). In ch |
| 520 | |
▼a In the second part, I will use the Ge/Si core/shell NW as a model system to talk about the compound contact formation in semiconductor heterostructures. In chapter 5, we managed to control the synchronous core/shell interface during the solid-st |
| 520 | |
▼a Finally, as appearing in chapter 6, I will introduce the ongoing electrical measurements of contact resistance for InGaAs transistors, and adapt the solid-phase-regrowth method to future reduce the contact resistance with locally introduced dopa |
| 590 | |
▼a School code: 0033. |
| 650 | 4 |
▼a Electrical engineering. |
| 690 | |
▼a 0544 |
| 710 | 20 |
▼a University of California, San Diego.
▼b Electrical Engineering (Applied Physics). |
| 773 | 0 |
▼t Dissertation Abstracts International
▼g 79-12B(E). |
| 773 | |
▼t Dissertation Abstract International |
| 790 | |
▼a 0033 |
| 791 | |
▼a Ph.D. |
| 792 | |
▼a 2018 |
| 793 | |
▼a English |
| 856 | 40 |
▼u http://www.riss.kr/pdu/ddodLink.do?id=T14998687
▼n KERIS |
| 980 | |
▼a 201812
▼f 2019 |
| 990 | |
▼a 관리자 |