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Wide bandgap semiconductors for power electronics : materials, devices, applications /
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| 자료유형 | E-Book |
|---|---|
| 개인저자 | Wellmann, P. (Peter), editor. Ohtani, Noboru, editor. Rupp, R. (Roland), editor. |
| 서명/저자사항 | Wide bandgap semiconductors for power electronics :materials, devices, applications /edited by Peter Wellmann, Noboru Ohtani, Roland Rupp. |
| 발행사항 | Weinheim, Germany : Wiley-VCH, [2022] |
| 형태사항 | 1 online resource (729 pages) |
| 소장본 주기 | Added to collection customer.56279.3 |
| ISBN | 3527824715 3527824723 9783527824724 3527824707 9783527824700 9783527824717 |
| 일반주기 |
11.3.3 Ion Implantation and Activation Annealing.
Two volumes. |
| 서지주기 | Includes bibliographical references and index. |
| 내용주기 | Cover -- Title Page -- Copyright -- Contents -- Preface -- Part I Silicon Carbide (SiC) -- Chapter 1 Dislocation Formation During Physical Vapor Transport Growth of 4H-SiC Crystals -- 1.1 Introduction -- 1.2 Formation of Basal Plane Dislocations During PVT Growth of 4H-SiC Crystals -- 1.2.1 Plan-View X-ray Topography Observations of Growth Front -- 1.2.2 Cross-Sectional X-ray Topography Observations of Growth Front -- 1.2.3 Characteristic BPD Distribution in PVT-Grown 4H-SiC Crystals -- 1.2.4 BPD Multiplication During PVT Growth -- 1.3 Dislocation Formation During Initial Stage of PVT Growth of 4H-SiC Crystals -- 1.3.1 Preparation of 4H-SiC Wafers with Beveled Interface Between Grown Crystal and Seed Crystal -- 1.3.2 Determination of Grown-Crystal/Seed Interface by Raman Microscopy -- 1.3.3 X-ray Topography Observations of Dislocation Structure at Grown-Crystal/Seed Interface -- 1.3.4 Formation Mechanism of BPD Networks and Their Migration into Seed Crystal -- 1.4 Conclusions -- References -- Chapter 2 Industrial Perspectives of SiC Bulk Growth -- 2.1 Introduction -- 2.2 SiC Substrates for GaN LEDs -- 2.3 SiC Substrates for Power SiC Devices -- 2.4 SiC Substrates for High-Frequency Devices -- 2.5 Cost Considerations for Commercial Production of SiC -- 2.6 Raw Materials -- 2.7 Reactor Hot Zone -- 2.8 System Equipment -- 2.9 Yield -- 2.10 Turning Boules into Wafers -- 2.11 Crystal Grind -- 2.12 Wafer Slicing -- 2.13 Wafer Polish -- 2.14 Summary -- Acknowledgments -- References -- Chapter 3 Homoepitaxial Growth of 4H-SiC on Vicinal Substrates -- 3.1 Introduction -- 3.2 Fundamentals of 4H-SiC Homoepitaxy for Power Electronic Devices -- 3.2.1 4H-SiC Polytype Replication for Homoepitaxial Growth on Vicinal Substrates -- 3.2.2 Homoepitaxial Growth by Chemical Vapor Deposition (CVD) Process -- 3.2.3 Doping in Homoepitaxial Growth. 3.3 Extended Defects in Homoepitaxial Layers -- 3.3.1 Classification of Extended Defects According to Glide Systems in 4H-SiC -- 3.3.2 Dislocation Reactions During Epitaxial Growth -- 3.3.3 Characterization Methods for Extended Defects in 4H-SiC Epilayers -- 3.4 Point Defects and Carrier Lifetime in Epilayers -- 3.4.1 Classification and General Properties of Point Defects in 4H-SiC -- 3.4.2 Basics on Recombination Carrier Lifetime in 4H-SiC -- 3.4.3 Carrier Lifetime-Affecting Point Defects -- 3.4.4 Carrier Lifetime Measurement in Epiwafers and Devices -- 3.5 Conclusion -- Acknowledgments -- References -- Chapter 4 Industrial Perspective of SiC Epitaxy -- 4.1 Introduction -- 4.2 Background -- 4.3 The Basics of SiC Epitaxy -- 4.4 SiC Epi Historical Origins -- 4.5 Planetary Multi-wafer Epitaxial Reactor Design Considerations -- 4.5.1 Rapidly Rotating Reactors -- 4.5.2 Horizontal Hot-Wall Reactors -- 4.6 Latest High-Throughput Epitaxial Reactor Status -- 4.7 Benefits and Challenges for Increasing Growth Rate in all Reactors -- 4.8 Increasing Wafer Diameters, Device Processing Considerations, and Projections -- 4.9 Summary -- Acknowledgment -- References -- Chapter 5 Status of 3C-SiC Growth and Device Technology -- 5.1 Introduction, Motivation, Short Review on 3C-SiC -- 5.2 Nucleation and Epitaxial Growth of 3C-SC on Si -- 5.2.1 Growth Process -- 5.2.2 Defects -- 5.2.3 Stress -- 5.3 Bulk Growth of 3C-SiC -- 5.3.1 Sublimation Growth of (111)-oriented 3C-SiC on Hexagonal SiC Substrates -- 5.3.2 Sublimation Growth of 3C-SiC on 3C-SiC CVD Seeding Layers -- 5.3.3 Continuous Fast CVD Growth of 3C-SiC on 3C-SiC CVD Seeding Layers -- 5.4 Processing and Testing of 3C-SiC Based Power Electronic Devices -- 5.4.1 Prospects for 3C-SiC Power Electronic Devices -- 5.4.2 3C-SiC Device Processing -- 5.4.3 MOS Processing -- 5.4.4 3C-SiC/SiO2 Interface Passivation. 7.2.6 Prismatic Slip during PVT growth 4H-SiC Boules -- 7.2.7 Relationship Between Local Basal Plane Bending and Basal Plane Dislocations in PVT-grown 4H-SiC Substrate Wafers -- 7.2.8 Investigation of Dislocation Behavior at the Early Stage of PVT-grown 4H-SiC Crystals -- 7.3 Dislocations in Homoepitaxial 4H-SiC -- 7.3.1 Conversion of BPDs into TEDs -- 7.3.2 Susceptibility of Basal Plane Dislocations to the Recombination-Enhanced Dislocation Glide in 4H Silicon Carbide -- 7.3.3 Nucleation of TEDs, BPDs, and TSDs at Substrate Surface Damage -- 7.3.4 Nucleation Mechanism of Dislocation Half-Loop Arrays in 4H-SiC Homo-Epitaxial Layers -- 7.3.5 V- and Y-shaped Frank-type Stacking Faults -- 7.4 Summary -- Acknowledgments -- References -- Chapter 8 Novel Theoretical Approaches for Understanding and Predicting Dislocation Evolution and Propagation -- 8.1 Introduction -- 8.2 General Modeling and Simulation Approaches -- 8.3 Continuum Dislocation Modeling Approaches -- 8.3.1 Alexander-Haasen Model -- 8.3.2 Continuum Dislocation Dynamics Models -- 8.3.2.1 The Simplest Model: Straight Parallel Dislocation with the Same Line Direction -- 8.3.2.2 The "Groma" Model: Straight Parallel Dislocations with Two Line Directions -- 8.3.2.3 The Kro?ner-Nye Model for Geometrically Necessary Dislocations -- 8.3.2.4 Three-dimensional Continuum Dislocation Dynamics (CDD) -- 8.4 Example 1: Comparison of the Alexander-Haasen and the Groma Model -- 8.4.1 Governing Equations -- 8.4.2 Physical System and Model Setup -- 8.4.3 Results and Discussion -- 8.5 Example 2: Dislocation Flow Between Veins -- 8.5.1 A Brief Introduction to Dislocation Patterning and the Similitude Principle -- 8.5.2 Physical System and Model Setup -- 8.5.3 Geometry and Initial Values -- 8.5.4 Results and Discussion -- 8.6 Summary and Conclusion -- References. Chapter 9 Gate Dielectrics for 4H-SiC Power Switches: Understanding the Structure and Effects of Electrically Active Point Defects at the 4H-SiC/SiO2 Interface -- 9.1 Introduction -- 9.2 Electrical Impact of Traps on MOSFET Characteristics -- 9.2.1 Sub threshold Sweep Hysteresis -- 9.2.2 Preconditioning Measurement -- 9.2.3 Bias Temperature Instability -- 9.2.4 Reduced Channel Electron Mobility -- 9.3 Microscopic Nature of Electrically Active Traps Near the Interface -- 9.3.1 The PbC Defect and the Subthreshold Sweep Hysteresis -- 9.3.2 The Intrinsic Electron Trap and the Reduced MOSFET Mobility -- 9.3.3 Point Defect Candidates for BTI -- 9.4 Conclusions and Outlook -- References -- Chapter 10 Epitaxial Graphene on Silicon Carbide as a Tailorable Metal-Semiconductor Interface -- 10.1 Introduction -- 10.2 Epitaxial Graphene as a Metal -- 10.3 Fabrication and Structuring of Epitaxial Graphene -- 10.3.1 Epitaxial Growth by Thermal Decomposition -- 10.3.2 Intercalation -- 10.3.3 Structuring of Epitaxial Graphene Layers and Partial Intercalation -- 10.4 Epitaxial Graphene as Tailorable Metal/Semiconductor Contact -- 10.4.1 Ohmic Contacts -- 10.4.2 Schottky Contacts -- 10.5 Monolithic Epitaxial Graphene Electronic Devices and Circuits -- 10.5.1 Discrete Epitaxial Graphene Devices -- 10.5.2 Monolithic Integrated Circuits -- 10.6 Novel Experiments on Light-Matter Interaction Enabled by Epitaxial Graphene -- 10.6.1 High-Frequency Operation and Ultimate Speed Limits of Schottky Diodes -- 10.6.2 Transparent Electrical Access to SiC for Novel Quantum Technology Applications -- 10.7 Conclusion -- Acknowledgments -- References -- Chapter 11 Device Processing Chain and Processing SiC in a Foundry Environment -- 11.1 Introduction -- 11.2 DMOSFET Structure -- 11.3 Process Integration of SiC MOSFETs -- 11.3.1 Lithography -- 11.3.2 SiC Etching. |
| 일반주제명 | Wide gap semiconductors. Wide gap semiconductors. |
| 언어 | 영어 |
| 기타형태 저록 | Print version:3527346716 |
| 대출바로가기 | https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=3042238 |
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