| LDR | | 11208cmm u2200589Mi 4500 |
| 001 | | 000000335897 |
| 003 | | OCoLC |
| 005 | | 20250207085837 |
| 006 | | m d |
| 007 | | cr cnu|||||||| |
| 008 | | 220626s2022 gw ob 001 0 eng d |
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▼a GBC2C5177
▼2 bnb |
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▼a 020364941
▼2 Uk |
| 020 | |
▼a 3527824715 |
| 020 | |
▼a 3527824723 |
| 020 | |
▼a 9783527824724 |
| 020 | |
▼a 3527824707 |
| 020 | |
▼a 9783527824700 |
| 020 | |
▼a 9783527824717
▼q (electronic bk.) |
| 035 | |
▼a 3042238
▼b (N$T) |
| 035 | |
▼a (OCoLC)1334898612 |
| 037 | |
▼a 9783527824717
▼b Wiley |
| 040 | |
▼a SFB
▼b eng
▼e rda
▼e pn
▼c SFB
▼d UKMGB
▼d OCLCF
▼d OCLCQ
▼d N$T
▼d 248032 |
| 049 | |
▼a MAIN |
| 050 | 4 |
▼a QC611.8.W53
▼b .W534 2022 |
| 066 | |
▼c (S |
| 082 | 04 |
▼a 621.38152
▼2 23 |
| 245 | 00 |
▼a Wide bandgap semiconductors for power electronics :
▼b materials, devices, applications /
▼c edited by Peter Wellmann, Noboru Ohtani, Roland Rupp. |
| 260 | |
▼a Weinheim, Germany :
▼b Wiley-VCH,
▼c [2022] |
| 300 | |
▼a 1 online resource (729 pages) |
| 336 | |
▼a text
▼b txt
▼2 rdacontent |
| 337 | |
▼a computer
▼b c
▼2 rdamedia |
| 338 | |
▼a online resource
▼b cr
▼2 rdacarrier |
| 500 | |
▼a 11.3.3 Ion Implantation and Activation Annealing. |
| 500 | |
▼a Two volumes. |
| 504 | |
▼a Includes bibliographical references and index. |
| 505 | 0 |
▼a Cover -- Title Page -- Copyright -- Contents -- Preface -- Part I Silicon Carbide (SiC) -- Chapter 1 Dislocation Formation During Physical Vapor Transport Growth of 4H-SiC Crystals -- 1.1 Introduction -- 1.2 Formation of Basal Plane Dislocations During PVT Growth of 4H-SiC Crystals -- 1.2.1 Plan-View X-ray Topography Observations of Growth Front -- 1.2.2 Cross-Sectional X-ray Topography Observations of Growth Front -- 1.2.3 Characteristic BPD Distribution in PVT-Grown 4H-SiC Crystals -- 1.2.4 BPD Multiplication During PVT Growth -- 1.3 Dislocation Formation During Initial Stage of PVT Growth of 4H-SiC Crystals -- 1.3.1 Preparation of 4H-SiC Wafers with Beveled Interface Between Grown Crystal and Seed Crystal -- 1.3.2 Determination of Grown-Crystal/Seed Interface by Raman Microscopy -- 1.3.3 X-ray Topography Observations of Dislocation Structure at Grown-Crystal/Seed Interface -- 1.3.4 Formation Mechanism of BPD Networks and Their Migration into Seed Crystal -- 1.4 Conclusions -- References -- Chapter 2 Industrial Perspectives of SiC Bulk Growth -- 2.1 Introduction -- 2.2 SiC Substrates for GaN LEDs -- 2.3 SiC Substrates for Power SiC Devices -- 2.4 SiC Substrates for High-Frequency Devices -- 2.5 Cost Considerations for Commercial Production of SiC -- 2.6 Raw Materials -- 2.7 Reactor Hot Zone -- 2.8 System Equipment -- 2.9 Yield -- 2.10 Turning Boules into Wafers -- 2.11 Crystal Grind -- 2.12 Wafer Slicing -- 2.13 Wafer Polish -- 2.14 Summary -- Acknowledgments -- References -- Chapter 3 Homoepitaxial Growth of 4H-SiC on Vicinal Substrates -- 3.1 Introduction -- 3.2 Fundamentals of 4H-SiC Homoepitaxy for Power Electronic Devices -- 3.2.1 4H-SiC Polytype Replication for Homoepitaxial Growth on Vicinal Substrates -- 3.2.2 Homoepitaxial Growth by Chemical Vapor Deposition (CVD) Process -- 3.2.3 Doping in Homoepitaxial Growth. |
| 505 | 8 |
▼a 3.3 Extended Defects in Homoepitaxial Layers -- 3.3.1 Classification of Extended Defects According to Glide Systems in 4H-SiC -- 3.3.2 Dislocation Reactions During Epitaxial Growth -- 3.3.3 Characterization Methods for Extended Defects in 4H-SiC Epilayers -- 3.4 Point Defects and Carrier Lifetime in Epilayers -- 3.4.1 Classification and General Properties of Point Defects in 4H-SiC -- 3.4.2 Basics on Recombination Carrier Lifetime in 4H-SiC -- 3.4.3 Carrier Lifetime-Affecting Point Defects -- 3.4.4 Carrier Lifetime Measurement in Epiwafers and Devices -- 3.5 Conclusion -- Acknowledgments -- References -- Chapter 4 Industrial Perspective of SiC Epitaxy -- 4.1 Introduction -- 4.2 Background -- 4.3 The Basics of SiC Epitaxy -- 4.4 SiC Epi Historical Origins -- 4.5 Planetary Multi-wafer Epitaxial Reactor Design Considerations -- 4.5.1 Rapidly Rotating Reactors -- 4.5.2 Horizontal Hot-Wall Reactors -- 4.6 Latest High-Throughput Epitaxial Reactor Status -- 4.7 Benefits and Challenges for Increasing Growth Rate in all Reactors -- 4.8 Increasing Wafer Diameters, Device Processing Considerations, and Projections -- 4.9 Summary -- Acknowledgment -- References -- Chapter 5 Status of 3C-SiC Growth and Device Technology -- 5.1 Introduction, Motivation, Short Review on 3C-SiC -- 5.2 Nucleation and Epitaxial Growth of 3C-SC on Si -- 5.2.1 Growth Process -- 5.2.2 Defects -- 5.2.3 Stress -- 5.3 Bulk Growth of 3C-SiC -- 5.3.1 Sublimation Growth of (111)-oriented 3C-SiC on Hexagonal SiC Substrates -- 5.3.2 Sublimation Growth of 3C-SiC on 3C-SiC CVD Seeding Layers -- 5.3.3 Continuous Fast CVD Growth of 3C-SiC on 3C-SiC CVD Seeding Layers -- 5.4 Processing and Testing of 3C-SiC Based Power Electronic Devices -- 5.4.1 Prospects for 3C-SiC Power Electronic Devices -- 5.4.2 3C-SiC Device Processing -- 5.4.3 MOS Processing -- 5.4.4 3C-SiC/SiO2 Interface Passivation. |
| 505 | 8 |
▼a 7.2.6 Prismatic Slip during PVT growth 4H-SiC Boules -- 7.2.7 Relationship Between Local Basal Plane Bending and Basal Plane Dislocations in PVT-grown 4H-SiC Substrate Wafers -- 7.2.8 Investigation of Dislocation Behavior at the Early Stage of PVT-grown 4H-SiC Crystals -- 7.3 Dislocations in Homoepitaxial 4H-SiC -- 7.3.1 Conversion of BPDs into TEDs -- 7.3.2 Susceptibility of Basal Plane Dislocations to the Recombination-Enhanced Dislocation Glide in 4H Silicon Carbide -- 7.3.3 Nucleation of TEDs, BPDs, and TSDs at Substrate Surface Damage -- 7.3.4 Nucleation Mechanism of Dislocation Half-Loop Arrays in 4H-SiC Homo-Epitaxial Layers -- 7.3.5 V- and Y-shaped Frank-type Stacking Faults -- 7.4 Summary -- Acknowledgments -- References -- Chapter 8 Novel Theoretical Approaches for Understanding and Predicting Dislocation Evolution and Propagation -- 8.1 Introduction -- 8.2 General Modeling and Simulation Approaches -- 8.3 Continuum Dislocation Modeling Approaches -- 8.3.1 Alexander-Haasen Model -- 8.3.2 Continuum Dislocation Dynamics Models -- 8.3.2.1 The Simplest Model: Straight Parallel Dislocation with the Same Line Direction -- 8.3.2.2 The "Groma" Model: Straight Parallel Dislocations with Two Line Directions -- 8.3.2.3 The Kro?ner-Nye Model for Geometrically Necessary Dislocations -- 8.3.2.4 Three-dimensional Continuum Dislocation Dynamics (CDD) -- 8.4 Example 1: Comparison of the Alexander-Haasen and the Groma Model -- 8.4.1 Governing Equations -- 8.4.2 Physical System and Model Setup -- 8.4.3 Results and Discussion -- 8.5 Example 2: Dislocation Flow Between Veins -- 8.5.1 A Brief Introduction to Dislocation Patterning and the Similitude Principle -- 8.5.2 Physical System and Model Setup -- 8.5.3 Geometry and Initial Values -- 8.5.4 Results and Discussion -- 8.6 Summary and Conclusion -- References. |
| 505 | 8 |
▼a Chapter 9 Gate Dielectrics for 4H-SiC Power Switches: Understanding the Structure and Effects of Electrically Active Point Defects at the 4H-SiC/SiO2 Interface -- 9.1 Introduction -- 9.2 Electrical Impact of Traps on MOSFET Characteristics -- 9.2.1 Sub threshold Sweep Hysteresis -- 9.2.2 Preconditioning Measurement -- 9.2.3 Bias Temperature Instability -- 9.2.4 Reduced Channel Electron Mobility -- 9.3 Microscopic Nature of Electrically Active Traps Near the Interface -- 9.3.1 The PbC Defect and the Subthreshold Sweep Hysteresis -- 9.3.2 The Intrinsic Electron Trap and the Reduced MOSFET Mobility -- 9.3.3 Point Defect Candidates for BTI -- 9.4 Conclusions and Outlook -- References -- Chapter 10 Epitaxial Graphene on Silicon Carbide as a Tailorable Metal-Semiconductor Interface -- 10.1 Introduction -- 10.2 Epitaxial Graphene as a Metal -- 10.3 Fabrication and Structuring of Epitaxial Graphene -- 10.3.1 Epitaxial Growth by Thermal Decomposition -- 10.3.2 Intercalation -- 10.3.3 Structuring of Epitaxial Graphene Layers and Partial Intercalation -- 10.4 Epitaxial Graphene as Tailorable Metal/Semiconductor Contact -- 10.4.1 Ohmic Contacts -- 10.4.2 Schottky Contacts -- 10.5 Monolithic Epitaxial Graphene Electronic Devices and Circuits -- 10.5.1 Discrete Epitaxial Graphene Devices -- 10.5.2 Monolithic Integrated Circuits -- 10.6 Novel Experiments on Light-Matter Interaction Enabled by Epitaxial Graphene -- 10.6.1 High-Frequency Operation and Ultimate Speed Limits of Schottky Diodes -- 10.6.2 Transparent Electrical Access to SiC for Novel Quantum Technology Applications -- 10.7 Conclusion -- Acknowledgments -- References -- Chapter 11 Device Processing Chain and Processing SiC in a Foundry Environment -- 11.1 Introduction -- 11.2 DMOSFET Structure -- 11.3 Process Integration of SiC MOSFETs -- 11.3.1 Lithography -- 11.3.2 SiC Etching. |
| 588 | |
▼a Description based on print version record. |
| 590 | |
▼a Added to collection customer.56279.3 |
| 650 | 0 |
▼a Wide gap semiconductors. |
| 650 | 7 |
▼a Wide gap semiconductors.
▼2 fast
▼0 (OCoLC)fst01174923 |
| 700 | 1 |
▼a Wellmann, P.
▼q (Peter),
▼e editor. |
| 700 | 1 |
▼a Ohtani, Noboru,
▼e editor. |
| 700 | 1 |
▼a Rupp, R.
▼q (Roland),
▼e editor. |
| 776 | 08 |
▼i Print version:
▼z 3527346716 |
| 856 | 40 |
▼3 EBSCOhost
▼u https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=3042238 |
| 880 | 8 |
▼6 505-00/(S
▼a 5.4.5 Surface Morphology Effects on 3C-SiC Thermal Oxidation -- 5.4.6 Thermal Oxidation Temperature Effects for 3C-SiC -- 5.4.7 Ohmic Contact Metalization -- 5.4.8 N-type 3C-SiC Ohmic Contacts -- 5.4.9 Ion Implantation -- 5.5 Summary -- Acknowledgements -- References -- Chapter 6 Intrinsic and Extrinsic Electrically Active Point Defects in SiC -- 6.1 Characterization of Electrically Active Defects -- 6.1.1 Deep Level Transient Spectroscopy -- 6.1.1.1 Profile Measurements -- 6.1.1.2 Poole-Frenkel Effect -- 6.1.1.3 Laplace DLTS -- 6.1.2 Low-energy Muon Spin Rotation Spectroscopy -- 6.1.2.1 關SR and Semiconductors -- 6.1.3 Density Functional Theory -- 6.2 Intrinsic Electrically Active Defects in SiC -- 6.2.1 The Carbon Vacancy, VC -- 6.2.2 The Silicon Vacancy, VSi -- 6.3 Transition Metal and Other Impurity Levels in SiC -- 6.4 Summary -- References -- Chapter 7 Dislocations in 4H-SiC Substrates and Epilayers -- 7.1 Introduction -- 7.2 Dislocations in Bulk 4H-SiC -- 7.2.1 Micropipes (MPs) and Closed-core Threading Screw Dislocations (TSDs) -- 7.2.2 Basal Plane Dislocations (BPDs) -- 7.2.3 Threading Edge Dislocations (TEDs) -- 7.2.4 Interaction between BPDs and TEDs -- 7.2.4.1 Hopping Frank-Read Source of BPDs -- 7.2.5 Threading Mixed Dislocations (TMDs) in 4H-SiC -- 7.2.5.1 Reaction Between Threading Dislocations with Burgers Vectors of ?뭖 + a and c + a Wherein the Opposite c-Components Annihilate Leaving Behind the Two a-Components -- 7.2.5.2 Reaction Between Threading Dislocations with Burgers Vectors of ?뭖 and c + a Leaving Behind the a-Component -- 7.2.5.3 Reaction Between Opposite-sign Threading Screw Dislocations with Burgers Vectors c and ?뭖 -- 7.2.5.4 Nucleation of Opposite Pair of c + a Dislocations and Their Deflection -- 7.2.5.5 Deflection of Threading c + a, c and Creation of Stacking Faults. |
| 938 | |
▼a EBSCOhost
▼b EBSC
▼n 3042238 |
| 990 | |
▼a 관리자 |
| 994 | |
▼a 92
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