| LDR | | 02685nmm uu200445 4500 |
| 001 | | 000000334287 |
| 005 | | 20240805180014 |
| 008 | | 181129s2016 |||||||||||||||||c||eng d |
| 020 | |
▼a 9780438135277 |
| 035 | |
▼a (MiAaPQ)AAI10903702 |
| 040 | |
▼a MiAaPQ
▼c MiAaPQ
▼d 248032 |
| 082 | 0 |
▼a 620.5 |
| 100 | 1 |
▼a Levin, Scott. |
| 245 | 10 |
▼a Heterogeneous Integration of III-V and II-IV Semiconductor Sheets onto Silicon Substrates Through Electric-Field Assisted Assembly for Device Applications. |
| 260 | |
▼a [S.l.] :
▼b The Pennsylvania State University.,
▼c 2016 |
| 260 | 1 |
▼a Ann Arbor :
▼b ProQuest Dissertations & Theses,
▼c 2016 |
| 300 | |
▼a 141 p. |
| 500 | |
▼a Source: Dissertation Abstracts International, Volume: 79-12(E), Section: B. |
| 502 | 1 |
▼a Thesis (Ph.D.)--The Pennsylvania State University, 2016. |
| 520 | |
▼a Market forces are creating a strong need to make value-added enhancements to silicon (Si) complementary metal-oxide semiconductor (CMOS) integrated circuit (IC) technology. One approach to achieve this goal is through continued scaling following |
| 520 | |
▼a Electric-field assisted assembly is a promising technique that allows for fast, low temperature and versatile integration of a large variety of materials onto alternative substrates. In this technique, particles can be assembled from solution at |
| 520 | |
▼a In this dissertation research, electric-field assisted assembly of micron-sized compound semiconductor (CS) sheets is studied through a combination of experiment and finite element method (FEM) modeling. This work presents a clear picture of cha |
| 520 | |
▼a Through a combination of electric-field assisted assembly and top down fabrication, a novel heterogeneous integration strategy is demonstrated. As a proof of concept, this technique is used to create In0.53Ga0.47As fin geometry p+-i-n+ junctions |
| 520 | |
▼a To further emphasize the versatility of this heterogeneous integration strategy, solution-synthesized germanium selenide (GeSe) particles are assembled onto Si substrates. GeSe offers promise for phase change memory applications and non-toxic so |
| 590 | |
▼a School code: 0176. |
| 650 | 4 |
▼a Nanotechnology. |
| 650 | 4 |
▼a Materials science. |
| 650 | 4 |
▼a Electrical engineering. |
| 690 | |
▼a 0652 |
| 690 | |
▼a 0794 |
| 690 | |
▼a 0544 |
| 710 | 20 |
▼a The Pennsylvania State University.
▼b Materials Science and Engineering. |
| 773 | 0 |
▼t Dissertation Abstracts International
▼g 79-12B(E). |
| 773 | |
▼t Dissertation Abstract International |
| 790 | |
▼a 0176 |
| 791 | |
▼a Ph.D. |
| 792 | |
▼a 2016 |
| 793 | |
▼a English |
| 856 | 40 |
▼u http://www.riss.kr/pdu/ddodLink.do?id=T15000684
▼n KERIS |
| 980 | |
▼a 201812
▼f 2019 |
| 990 | |
▼a 관리자 |