| LDR | | 01590nmm uu200373 4500 |
| 001 | | 000000333960 |
| 005 | | 20240805174850 |
| 008 | | 181129s2015 |||||||||||||||||c||eng d |
| 020 | |
▼a 9780438097032 |
| 035 | |
▼a (MiAaPQ)AAI10891739 |
| 035 | |
▼a (MiAaPQ)OhioLINK:osu1448405475 |
| 040 | |
▼a MiAaPQ
▼c MiAaPQ
▼d 248032 |
| 082 | 0 |
▼a 539.76 |
| 100 | 1 |
▼a Mulligan, Padhraic Liam. |
| 245 | 10 |
▼a Fabrication and Characterization of Gallium Nitride Schottky Diode Devices for Determination of Electron-Hole Pair Creation Energy and Intrinsic Neutron Sensitivity. |
| 260 | |
▼a [S.l.] :
▼b The Ohio State University.,
▼c 2015 |
| 260 | 1 |
▼a Ann Arbor :
▼b ProQuest Dissertations & Theses,
▼c 2015 |
| 300 | |
▼a 208 p. |
| 500 | |
▼a Source: Dissertation Abstracts International, Volume: 79-10(E), Section: B. |
| 500 | |
▼a Adviser: Lei Cao. |
| 502 | 1 |
▼a Thesis (Ph.D.)--The Ohio State University, 2015. |
| 520 | |
▼a The desire for room temperature, radiation hard, solid-state radiation detectors has driven research into many new semiconductor materials. One such material is the III-V compound semiconductor gallium nitride (GaN). With a bandgap of 3.39 eV, a |
| 590 | |
▼a School code: 0168. |
| 650 | 4 |
▼a Nuclear engineering. |
| 690 | |
▼a 0552 |
| 710 | 20 |
▼a The Ohio State University.
▼b Nuclear Engineering. |
| 773 | 0 |
▼t Dissertation Abstracts International
▼g 79-10B(E). |
| 773 | |
▼t Dissertation Abstract International |
| 790 | |
▼a 0168 |
| 791 | |
▼a Ph.D. |
| 792 | |
▼a 2015 |
| 793 | |
▼a English |
| 856 | 40 |
▼u http://www.riss.kr/pdu/ddodLink.do?id=T15000257
▼n KERIS |
| 980 | |
▼a 201812
▼f 2019 |
| 990 | |
▼a 관리자 |