LDR | | 01991nmm uu200421 4500 |
001 | | 000000333686 |
005 | | 20240805173518 |
008 | | 181129s2018 |||||||||||||||||c||eng d |
020 | |
▼a 9780438417205 |
035 | |
▼a (MiAaPQ)AAI10829969 |
035 | |
▼a (MiAaPQ)ucsb:13953 |
040 | |
▼a MiAaPQ
▼c MiAaPQ
▼d 248032 |
082 | 0 |
▼a 621.3 |
100 | 1 |
▼a Spott, Alexander Weber. |
245 | 10 |
▼a Heterogeneous Integration of Mid-Infrared Lasers on Silicon. |
260 | |
▼a [S.l.] :
▼b University of California, Santa Barbara.,
▼c 2018 |
260 | 1 |
▼a Ann Arbor :
▼b ProQuest Dissertations & Theses,
▼c 2018 |
300 | |
▼a 158 p. |
500 | |
▼a Source: Dissertation Abstracts International, Volume: 80-02(E), Section: B. |
500 | |
▼a Adviser: John E. Bowers. |
502 | 1 |
▼a Thesis (Ph.D.)--University of California, Santa Barbara, 2018. |
520 | |
▼a The mid-infrared spectral region, ~2--20 microm, is of interest for numerous sensing, medical, industrial, and military applications. The rovibrational transition energies of many important molecules fall within this region, making mid-infrared |
520 | |
▼a Silicon photonic integration promises to address many of these applications on an integrated, low-cost platform. For example, a diverse portfolio of photonic sensors can potentially be integrated on a single silicon chip. Resonators, multiplexer |
520 | |
▼a This thesis presents the heterogeneous silicon/III-V integration of mid-infrared InP-based type-I diode lasers for lambda &ap |
590 | |
▼a School code: 0035. |
650 | 4 |
▼a Electrical engineering. |
650 | 4 |
▼a Engineering. |
690 | |
▼a 0544 |
690 | |
▼a 0537 |
710 | 20 |
▼a University of California, Santa Barbara.
▼b Electrical & Computer Engineering. |
773 | 0 |
▼t Dissertation Abstracts International
▼g 80-02B(E). |
773 | |
▼t Dissertation Abstract International |
790 | |
▼a 0035 |
791 | |
▼a Ph.D. |
792 | |
▼a 2018 |
793 | |
▼a English |
856 | 40 |
▼u http://www.riss.kr/pdu/ddodLink.do?id=T14999375
▼n KERIS |
980 | |
▼a 201812
▼f 2019 |
990 | |
▼a 관리자 |