| LDR | | 02483nmm uu200445 4500 |
| 001 | | 000000333396 |
| 005 | | 20240805172941 |
| 008 | | 181129s2018 |||||||||||||||||c||eng d |
| 020 | |
▼a 9780438324848 |
| 035 | |
▼a (MiAaPQ)AAI10816943 |
| 035 | |
▼a (MiAaPQ)berkeley:17885 |
| 040 | |
▼a MiAaPQ
▼c MiAaPQ
▼d 248032 |
| 082 | 0 |
▼a 530 |
| 100 | 1 |
▼a Jacks, Hilary C. |
| 245 | 10 |
▼a Identifying Structures Responsible for Two-level Systems in Amorphous Silicon. |
| 260 | |
▼a [S.l.] :
▼b University of California, Berkeley.,
▼c 2018 |
| 260 | 1 |
▼a Ann Arbor :
▼b ProQuest Dissertations & Theses,
▼c 2018 |
| 300 | |
▼a 80 p. |
| 500 | |
▼a Source: Dissertation Abstracts International, Volume: 80-01(E), Section: B. |
| 500 | |
▼a Adviser: Frances Hellman. |
| 502 | 1 |
▼a Thesis (Ph.D.)--University of California, Berkeley, 2018. |
| 520 | |
▼a Tunneling two-level systems (TLS) are considered by the glass community to be a hallmark characteristic of amorphous materials and even the disorder that is inherent to these systems. They are observed in all glassy materials and have thus histo |
| 520 | |
▼a The monatomic nature and narrow distribution of hybridization types in amorphous silicon (a-Si) offers it as a relatively straightforward system by which to study covalent random networks. Low-TLS a-Si and a-Si:H are candidate dielectrics for ph |
| 520 | |
▼a After an introductory chapter, Chapter 2 describes findings from atomic density measurements, Raman spectroscopy, electron diffraction, high resolution transmission electron microscopy, fluctuation electron microscopy, electron energy loss micro |
| 520 | |
▼a In Chapter 3, we compile new and old findings in TLS density as measured by nanocalorimetry and internal friction |
| 520 | |
▼a a-Si:H results support that TLS presence depends on both film density and hydrogen content, both of which are nontrivially related to growth temperature. As with a-Si, we find that TLS density in a-Si:H decreases as atomic density increases. Cha |
| 590 | |
▼a School code: 0028. |
| 650 | 4 |
▼a Condensed matter physics. |
| 650 | 4 |
▼a Materials science. |
| 690 | |
▼a 0611 |
| 690 | |
▼a 0794 |
| 710 | 20 |
▼a University of California, Berkeley.
▼b Physics. |
| 773 | 0 |
▼t Dissertation Abstracts International
▼g 80-01B(E). |
| 773 | |
▼t Dissertation Abstract International |
| 790 | |
▼a 0028 |
| 791 | |
▼a Ph.D. |
| 792 | |
▼a 2018 |
| 793 | |
▼a English |
| 856 | 40 |
▼u http://www.riss.kr/pdu/ddodLink.do?id=T14998303
▼n KERIS |
| 980 | |
▼a 201812
▼f 2019 |
| 990 | |
▼a 관리자 |