| LDR | | 01752nmm uu200385 4500 |
| 001 | | 000000333111 |
| 005 | | 20240805172219 |
| 008 | | 181129s2018 |||||||||||||||||c||eng d |
| 020 | |
▼a 9780438017849 |
| 035 | |
▼a (MiAaPQ)AAI10790845 |
| 035 | |
▼a (MiAaPQ)purdue:22476 |
| 040 | |
▼a MiAaPQ
▼c MiAaPQ
▼d 248032 |
| 082 | 0 |
▼a 621.3 |
| 100 | 1 |
▼a Prakash, Abhijith. |
| 245 | 10 |
▼a Tunneling Transistors from 2D Crystals for Low-Power Electronic Applications. |
| 260 | |
▼a [S.l.] :
▼b Purdue University.,
▼c 2018 |
| 260 | 1 |
▼a Ann Arbor :
▼b ProQuest Dissertations & Theses,
▼c 2018 |
| 300 | |
▼a 116 p. |
| 500 | |
▼a Source: Dissertation Abstracts International, Volume: 79-10(E), Section: B. |
| 500 | |
▼a Adviser: Joerg Appenzeller. |
| 502 | 1 |
▼a Thesis (Ph.D.)--Purdue University, 2018. |
| 520 | |
▼a In the past, failure to handle heat dissipation in the integrated circuits (ICs) employing bipolar transistor technologies had forced the semiconductor industry to resort to complementary metal oxide semiconductor (CMOS) technology. Over the las |
| 520 | |
▼a As a part of this research, band-to-band tunneling has been experimentally demonstrated in WSe2 tunneling transistors. While working towards improving the electrical characteristics of these transistors, electronic bandgap of WSe2 as a function |
| 590 | |
▼a School code: 0183. |
| 650 | 4 |
▼a Electrical engineering. |
| 690 | |
▼a 0544 |
| 710 | 20 |
▼a Purdue University.
▼b Electrical and Computer Engineering. |
| 773 | 0 |
▼t Dissertation Abstracts International
▼g 79-10B(E). |
| 773 | |
▼t Dissertation Abstract International |
| 790 | |
▼a 0183 |
| 791 | |
▼a Ph.D. |
| 792 | |
▼a 2018 |
| 793 | |
▼a English |
| 856 | 40 |
▼u http://www.riss.kr/pdu/ddodLink.do?id=T14997610
▼n KERIS |
| 980 | |
▼a 201812
▼f 2019 |
| 990 | |
▼a 관리자 |