| LDR | | 02664nmm uu200469 4500 |
| 001 | | 000000332913 |
| 005 | | 20240805171827 |
| 008 | | 181129s2018 |||||||||||||||||c||eng d |
| 020 | |
▼a 9780438018501 |
| 035 | |
▼a (MiAaPQ)AAI10808162 |
| 035 | |
▼a (MiAaPQ)purdue:22683 |
| 040 | |
▼a MiAaPQ
▼c MiAaPQ
▼d 248032 |
| 082 | 0 |
▼a 620.11 |
| 100 | 1 |
▼a Guzman, David M. |
| 245 | 10 |
▼a Structural, Thermodynamic, and Electronic Properties of Mixed Ionic/Electronic Conductor Materials. |
| 260 | |
▼a [S.l.] :
▼b Purdue University.,
▼c 2018 |
| 260 | 1 |
▼a Ann Arbor :
▼b ProQuest Dissertations & Theses,
▼c 2018 |
| 300 | |
▼a 223 p. |
| 500 | |
▼a Source: Dissertation Abstracts International, Volume: 79-10(E), Section: B. |
| 500 | |
▼a Adviser: Alejandro Strachan. |
| 502 | 1 |
▼a Thesis (Ph.D.)--Purdue University, 2018. |
| 520 | |
▼a Due to the mainstream CMOS technology facing a rapid approach to the fundamental downscaling limit, beyond CMOS technologies are under active investigation and development with the intention of revolutionizing and sustaining a wide range of appl |
| 520 | |
▼a The Cu/a-SiO2 system is a promising candidate for resistive switching memory applications. The conduction mechanism in the low-resistance state is known to be filamentary, that is, a physical metallic filament bridges between the metallic electr |
| 520 | |
▼a Since ab initio molecular dynamics are prohibitively expensive to simulate the switching process in Cu/a-SiO 2 electrochemical metallization cells, a multi-scale simulation approach based on electrochemical dynamics with implicit degrees of free |
| 520 | |
▼a Unlike the Cu/a-SiO2 system which only exhibits filamentary switching, copper-doped germanium-based glassy chalcogenides show filamentary or threshold type of conduction depending on the chemical composition of the glass and copper concentration |
| 520 | |
▼a Finally, taking advantage of the van der Waals gap as intercalation sites and crystal order in molybdenum disulfide, a novel mixed ionic-electronic conductor material based on copper and silver intercalation of MoS2 is proposed. The theoretical |
| 590 | |
▼a School code: 0183. |
| 650 | 4 |
▼a Materials science. |
| 650 | 4 |
▼a Condensed matter physics. |
| 650 | 4 |
▼a Computational physics. |
| 690 | |
▼a 0794 |
| 690 | |
▼a 0611 |
| 690 | |
▼a 0216 |
| 710 | 20 |
▼a Purdue University.
▼b Materials Engineering. |
| 773 | 0 |
▼t Dissertation Abstracts International
▼g 79-10B(E). |
| 773 | |
▼t Dissertation Abstract International |
| 790 | |
▼a 0183 |
| 791 | |
▼a Ph.D. |
| 792 | |
▼a 2018 |
| 793 | |
▼a English |
| 856 | 40 |
▼u http://www.riss.kr/pdu/ddodLink.do?id=T14997796
▼n KERIS |
| 980 | |
▼a 201812
▼f 2019 |
| 990 | |
▼a 관리자 |