| LDR | | 02723nmm uu200445 4500 |
| 001 | | 000000332894 |
| 005 | | 20240805171805 |
| 008 | | 181129s2018 |||||||||||||||||c||eng d |
| 020 | |
▼a 9780355940763 |
| 035 | |
▼a (MiAaPQ)AAI10809336 |
| 035 | |
▼a (MiAaPQ)cmu:10220 |
| 040 | |
▼a MiAaPQ
▼c MiAaPQ
▼d 248032 |
| 082 | 0 |
▼a 621.3 |
| 100 | 1 |
▼a Guney, Metin G. |
| 245 | 10 |
▼a High Dynamic Range CMOS-MEMS Capacitive Accelerometer Array with Drift Compensation. |
| 260 | |
▼a [S.l.] :
▼b Carnegie Mellon University.,
▼c 2018 |
| 260 | 1 |
▼a Ann Arbor :
▼b ProQuest Dissertations & Theses,
▼c 2018 |
| 300 | |
▼a 277 p. |
| 500 | |
▼a Source: Dissertation Abstracts International, Volume: 79-10(E), Section: B. |
| 500 | |
▼a Adviser: Gary K. Fedder. |
| 502 | 1 |
▼a Thesis (Ph.D.)--Carnegie Mellon University, 2018. |
| 506 | |
▼a This item is not available from ProQuest Dissertations & Theses. |
| 520 | |
▼a This thesis explains the design, fabrication and characterization steps of a high dynamic range CMOS-MEMS capacitive accelerometer array and on-chip environmental sensors for bias drift compensation. Inertial navigation under harsh environments |
| 520 | |
▼a PTAT temperature sensors, piezoresistive stress sensors and resonator-oscillators integrated across the accelerometer chip provide high-resolution environmental measurements for the compensation of long-term bias and scale factor drift. Simultan |
| 520 | |
▼a The CMOS-MEMS accelerometer system-on-chip is fabricated in a TowerJazz 0.18 microm CMOS process. The post-CMOS MEMS processing steps are tuned to reduce the top metal milling and sidewall polymer deposition. A reactive ion etch recipe is develo |
| 520 | |
▼a The PTAT temperature sensors have 3.1 mV/K measured sensitivity and 7.1 mK resolution with high repeatability. The compensation of the accelerometer readout for temperature variations down to 7.1 mK translates to 2.6 ppm scale factor stability f |
| 520 | |
▼a The accelerometer array is demonstrated to have 23.7 mG/&radic |
| 520 | |
▼a The long term bias drift of the accelerometer is shown to be correlated with the temperature and stress variations. Compensation of the accelerometer readout based on the stress and temperature sensor measurements leads to an observable improvem |
| 590 | |
▼a School code: 0041. |
| 650 | 4 |
▼a Electrical engineering. |
| 690 | |
▼a 0544 |
| 710 | 20 |
▼a Carnegie Mellon University.
▼b Electrical and Computer Engineering. |
| 773 | 0 |
▼t Dissertation Abstracts International
▼g 79-10B(E). |
| 773 | |
▼t Dissertation Abstract International |
| 790 | |
▼a 0041 |
| 791 | |
▼a Ph.D. |
| 792 | |
▼a 2018 |
| 793 | |
▼a English |
| 856 | 40 |
▼u http://www.riss.kr/pdu/ddodLink.do?id=T14997870
▼n KERIS |
| 980 | |
▼a 201812
▼f 2019 |
| 990 | |
▼a 관리자 |