| LDR | | 02358nmm uu200409 4500 |
| 001 | | 000000332710 |
| 005 | | 20240805171436 |
| 008 | | 181129s2018 |||||||||||||||||c||eng d |
| 020 | |
▼a 9780438324237 |
| 035 | |
▼a (MiAaPQ)AAI10811959 |
| 035 | |
▼a (MiAaPQ)berkeley:17759 |
| 040 | |
▼a MiAaPQ
▼c MiAaPQ
▼d 248032 |
| 082 | 0 |
▼a 621.3 |
| 100 | 1 |
▼a Duarte, Juan Pablo Duarte. |
| 245 | 10 |
▼a Mathematical Compact Models of Advanced Transistors for Numerical Simulation and Hardware Design. |
| 260 | |
▼a [S.l.] :
▼b University of California, Berkeley.,
▼c 2018 |
| 260 | 1 |
▼a Ann Arbor :
▼b ProQuest Dissertations & Theses,
▼c 2018 |
| 300 | |
▼a 164 p. |
| 500 | |
▼a Source: Dissertation Abstracts International, Volume: 80-01(E), Section: B. |
| 500 | |
▼a Adviser: Chenming Hu. |
| 502 | 1 |
▼a Thesis (Ph.D.)--University of California, Berkeley, 2018. |
| 520 | |
▼a Mathematical compact models play a key role in designing integrated circuits. They serve as a medium of information exchange between foundries and designers. A compact model, which is a set of long mathematical equations based on the physics of |
| 520 | |
▼a Since traditional transistor scaling had reached limitations due short-channel effects and oxide tunneling, the introduction of FinFET and UTBSOIs in high-volume manufacturing at 20nm, 14nm and 10nm technology nodes had let the electronic indust |
| 520 | |
▼a For extremely scaled technologies, NC-FETs are quickly emerging as preferred candidates for digital and analog applications. The recent discovery of ferroelectric (FE) materials using conventional CMOS fabrication technology has led to the first |
| 520 | |
▼a This thesis gives insights into the device physics and behavior of FE based negative capacitance FinFETs (NC-FinFETs) by presenting numerical simulations, compact models, and circuit evaluation of these devices. NC-FinFETs may have a floating me |
| 590 | |
▼a School code: 0028. |
| 650 | 4 |
▼a Electrical engineering. |
| 690 | |
▼a 0544 |
| 710 | 20 |
▼a University of California, Berkeley.
▼b Electrical Engineering & Computer Sciences. |
| 773 | 0 |
▼t Dissertation Abstracts International
▼g 80-01B(E). |
| 773 | |
▼t Dissertation Abstract International |
| 790 | |
▼a 0028 |
| 791 | |
▼a Ph.D. |
| 792 | |
▼a 2018 |
| 793 | |
▼a English |
| 856 | 40 |
▼u http://www.riss.kr/pdu/ddodLink.do?id=T14998007
▼n KERIS |
| 980 | |
▼a 201812
▼f 2019 |
| 990 | |
▼a 관리자 |