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LDR01140nmm uu200337 4500
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008181129s2017 |||||||||||||||||c||eng d
020 ▼a 9780438165960
035 ▼a (MiAaPQ)AAI10906601
040 ▼a MiAaPQ ▼c MiAaPQ ▼d 248032
0820 ▼a 620.11
1001 ▼a Hays, David C.
24510 ▼a Energy Band Offset Study of InGaZnO4 and Potential Gate Dielectrics.
260 ▼a [S.l.] : ▼b University of Florida., ▼c 2017
260 1 ▼a Ann Arbor : ▼b ProQuest Dissertations & Theses, ▼c 2017
300 ▼a 122 p.
500 ▼a Source: Dissertation Abstracts International, Volume: 79-12(E), Section: B.
5021 ▼a Thesis (Ph.D.)--University of Florida, 2017.
590 ▼a School code: 0070.
650 4 ▼a Materials science.
690 ▼a 0794
71020 ▼a University of Florida. ▼b Materials Science and Engineering.
7730 ▼t Dissertation Abstracts International ▼g 79-12B(E).
773 ▼t Dissertation Abstract International
790 ▼a 0070
791 ▼a Ph.D.
792 ▼a 2017
793 ▼a English
85640 ▼u http://www.riss.kr/pdu/ddodLink.do?id=T15000770 ▼n KERIS
980 ▼a 201812 ▼f 2019
990 ▼a 관리자