LDR | | 02009nmm uu200397 4500 |
001 | | 000000331855 |
005 | | 20240805165517 |
008 | | 181129s2018 |||||||||||||||||c||eng d |
020 | |
▼a 9780438351028 |
035 | |
▼a (MiAaPQ)AAI10827017 |
035 | |
▼a (MiAaPQ)umn:19318 |
040 | |
▼a MiAaPQ
▼c MiAaPQ
▼d 248032 |
082 | 0 |
▼a 621.3 |
100 | 1 |
▼a Benton, Brian T. |
245 | 10 |
▼a Electronic Transport in Semiconductor Nanocrystal Thin Films. |
260 | |
▼a [S.l.] :
▼b University of Minnesota.,
▼c 2018 |
260 | 1 |
▼a Ann Arbor :
▼b ProQuest Dissertations & Theses,
▼c 2018 |
300 | |
▼a 115 p. |
500 | |
▼a Source: Dissertation Abstracts International, Volume: 80-01(E), Section: B. |
500 | |
▼a Adviser: Stephen A. Campbell. |
502 | 1 |
▼a Thesis (Ph.D.)--University of Minnesota, 2018. |
520 | |
▼a Semiconductor nanocrystal (NC) thin films have emerged as intriguing materials for low cost synthesis of electronic devices with size-tunable optical and electronic properties that enable unique control over operating characteristics. However, i |
520 | |
▼a In this thesis, the electronic conduction in two semiconductor NC material systems was explored. First, ZnO was used as a wide bandgap material that was known to have high native doping levels and electronic conduction that can approach metallic |
520 | |
▼a Second, Ge NCs were studied as a narrow bandgap material with large quantum confinement effects leading to bandgap increases of up to 50%. Thermal admittance spectroscopy (TAS) and field-effect transistor (FET) measurements were used together to |
590 | |
▼a School code: 0130. |
650 | 4 |
▼a Electrical engineering. |
690 | |
▼a 0544 |
710 | 20 |
▼a University of Minnesota.
▼b Electrical/Computer Engineering. |
773 | 0 |
▼t Dissertation Abstracts International
▼g 80-01B(E). |
773 | |
▼t Dissertation Abstract International |
790 | |
▼a 0130 |
791 | |
▼a Ph.D. |
792 | |
▼a 2018 |
793 | |
▼a English |
856 | 40 |
▼u http://www.riss.kr/pdu/ddodLink.do?id=T14998969
▼n KERIS |
980 | |
▼a 201812
▼f 2019 |
990 | |
▼a 관리자 |