LDR | | 02235nmm uu200409 4500 |
001 | | 000000331525 |
005 | | 20240805164547 |
008 | | 181129s2018 |||||||||||||||||c||eng d |
020 | |
▼a 9780438345317 |
035 | |
▼a (MiAaPQ)AAI10929453 |
035 | |
▼a (MiAaPQ)cornellgrad:11118 |
040 | |
▼a MiAaPQ
▼c MiAaPQ
▼d 248032 |
082 | 0 |
▼a 621.3 |
100 | 1 |
▼a Zhu, Mingda. |
245 | 10 |
▼a Exploring Polarization Doping in Gan for Power Applications. |
260 | |
▼a [S.l.] :
▼b Cornell University.,
▼c 2018 |
260 | 1 |
▼a Ann Arbor :
▼b ProQuest Dissertations & Theses,
▼c 2018 |
300 | |
▼a 167 p. |
500 | |
▼a Source: Dissertation Abstracts International, Volume: 80-01(E), Section: B. |
500 | |
▼a Adviser: Huili Grace Xing. |
502 | 1 |
▼a Thesis (Ph.D.)--Cornell University, 2018. |
520 | |
▼a GaN has made tremendous progress in photonic and radio frequency applications, largely thanks to its wide band gap (3.4 eV), the high electron mobility (up to 2200 cm2 /V 쨌 s) and saturation velocity (>10 7 cm/s). With the wide band gap and high |
520 | |
▼a GaN high electron mobility transistors (HEMTs), which are based on the polarization-induced 2DEG, have already been well researched for power applications. The highest reported breakdown voltage of GaN HEMTs is as high as &sim |
520 | |
▼a In contrast to the polarization-induced 2DEG, the polarization-induced 3D bulk doping is rarely studied for power applications. Here we start by studying the electron mobility in polarization-doped AlxGa 1-x N with a low doping concentration of |
520 | |
▼a Both polarization-induced 2DEG and bulk doping are then applied to a GaN metal- oxide-semiconductor HEMT (MOSHEMT) with a polarization-doped p-type back barrier. This device, referred to as PolarMOSH is an integral component for the power transi |
590 | |
▼a School code: 0058. |
650 | 4 |
▼a Electrical engineering. |
690 | |
▼a 0544 |
710 | 20 |
▼a Cornell University.
▼b Electrical & Computer Engrng. |
773 | 0 |
▼t Dissertation Abstracts International
▼g 80-01B(E). |
773 | |
▼t Dissertation Abstract International |
790 | |
▼a 0058 |
791 | |
▼a Ph.D. |
792 | |
▼a 2018 |
793 | |
▼a English |
856 | 40 |
▼u http://www.riss.kr/pdu/ddodLink.do?id=T15000945
▼n KERIS |
980 | |
▼a 201812
▼f 2019 |
990 | |
▼a 관리자 |