| LDR | | 01883nmm uu200421 4500 |
| 001 | | 000000331360 |
| 005 | | 20240805164229 |
| 008 | | 181129s2016 |||||||||||||||||c||eng d |
| 020 | |
▼a 9780438166530 |
| 035 | |
▼a (MiAaPQ)AAI10906659 |
| 040 | |
▼a MiAaPQ
▼c MiAaPQ
▼d 248032 |
| 082 | 0 |
▼a 660 |
| 100 | 1 |
▼a Li, Zhi. |
| 245 | 10 |
▼a Thermodynamic Assessments and Atomic Layer Deposition for CIGS-Based Thin Film Solar Cell. |
| 260 | |
▼a [S.l.] :
▼b University of Florida.,
▼c 2016 |
| 260 | 1 |
▼a Ann Arbor :
▼b ProQuest Dissertations & Theses,
▼c 2016 |
| 300 | |
▼a 246 p. |
| 500 | |
▼a Source: Dissertation Abstracts International, Volume: 79-12(E), Section: B. |
| 502 | 1 |
▼a Thesis (Ph.D.)--University of Florida, 2016. |
| 520 | |
▼a The thermodynamic database for the Ag-Cu-Ga-Se quaternary system was optimized against all available experimental data using the CALPHAD (CALculation of PHAse Diagram) method in order to aid the development of (Ag,Cu)(In,Ga)Se 2 selenization pro |
| 520 | |
▼a Zinc Oxysulfide (ZnO1-xSx) thin film was deposited using Atomic Layer Deposition (ALD) on CIGS thin film substrate, serving as an alternative buffer layer material to CdS for wide-bandgap CIGS thin film solar cells. XPS studies of the deposited |
| 520 | |
▼a In and Ga were doped into ZnO thin film. The comparable minimum resistivity 1.65 x 10-3 O&dot |
| 590 | |
▼a School code: 0070. |
| 650 | 4 |
▼a Chemical engineering. |
| 650 | 4 |
▼a Materials science. |
| 650 | 4 |
▼a Engineering. |
| 690 | |
▼a 0542 |
| 690 | |
▼a 0794 |
| 690 | |
▼a 0537 |
| 710 | 20 |
▼a University of Florida.
▼b Chemical Engineering. |
| 773 | 0 |
▼t Dissertation Abstracts International
▼g 79-12B(E). |
| 773 | |
▼t Dissertation Abstract International |
| 790 | |
▼a 0070 |
| 791 | |
▼a Ph.D. |
| 792 | |
▼a 2016 |
| 793 | |
▼a English |
| 856 | 40 |
▼u http://www.riss.kr/pdu/ddodLink.do?id=T15000779
▼n KERIS |
| 980 | |
▼a 201812
▼f 2019 |
| 990 | |
▼a 관리자 |