| LDR | | 00000nmm u2200205 4500 |
| 001 | | 000000330754 |
| 005 | | 20241104152233 |
| 008 | | 181129s2017 ||| | | | eng d |
| 020 | |
▼a 9780438121218 |
| 035 | |
▼a (MiAaPQ)AAI10902821 |
| 040 | |
▼a MiAaPQ
▼c MiAaPQ
▼d 248032 |
| 049 | 1 |
▼f DP |
| 082 | 0 |
▼a 620.5 |
| 100 | 1 |
▼a Martin, Thomas P., Jr. |
| 245 | 10 |
▼a Effects of Ultra-Thin Germanium Layers at the Silicon-Oxide Interface During Oxidation Reactions on Injection of Interstitials. |
| 260 | |
▼a [S.l.] :
▼b University of Florida.,
▼c 2017 |
| 260 | 1 |
▼a Ann Arbor :
▼b ProQuest Dissertations & Theses,
▼c 2017 |
| 300 | |
▼a 158 p. |
| 500 | |
▼a Source: Dissertation Abstracts International, Volume: 79-11(E), Section: B. |
| 502 | 1 |
▼a Thesis (Ph.D.)--University of Florida, 2017. |
| 520 | |
▼a It is well known that the oxidation of silicon will inject interstitial atoms into the bulk, causing various effects such as OED and OSF. The presence of germanium at this oxidizing interface has long been known to suppress this interstitial inj |
| 590 | |
▼a School code: 0070. |
| 650 | 4 |
▼a Nanotechnology. |
| 690 | |
▼a 0652 |
| 710 | 20 |
▼a University of Florida.
▼b Materials Science and Engineering. |
| 773 | 0 |
▼t Dissertation Abstracts International
▼g 79-11B(E). |
| 773 | |
▼t Dissertation Abstract International |
| 790 | |
▼a 0070 |
| 791 | |
▼a Ph.D. |
| 792 | |
▼a 2017 |
| 793 | |
▼a English |
| 856 | 40 |
▼u http://www.riss.kr/pdu/ddodLink.do?id=T15000403
▼n KERIS |
| 980 | |
▼a 201812
▼f 2019 |
| 990 | |
▼a 관리자
▼b 관리자 |