| LDR | | 00000nmm u2200205 4500 |
| 001 | | 000000330748 |
| 005 | | 20241104151806 |
| 008 | | 181129s2017 ||| | | | eng d |
| 020 | |
▼a 9780438120655 |
| 035 | |
▼a (MiAaPQ)AAI10902810 |
| 040 | |
▼a MiAaPQ
▼c MiAaPQ
▼d 248032 |
| 049 | 1 |
▼f DP |
| 082 | 0 |
▼a 620.11 |
| 100 | 1 |
▼a Kennon, Ethan Lowell. |
| 245 | 10 |
▼a Behavior of Highly Te doped InGaAs. |
| 260 | |
▼a [S.l.] :
▼b University of Florida.,
▼c 2017 |
| 260 | 1 |
▼a Ann Arbor :
▼b ProQuest Dissertations & Theses,
▼c 2017 |
| 300 | |
▼a 165 p. |
| 500 | |
▼a Source: Dissertation Abstracts International, Volume: 79-11(E), Section: B. |
| 502 | 1 |
▼a Thesis (Ph.D.)--University of Florida, 2017. |
| 520 | |
▼a The exponential growth of semiconductor technology has allowed it to reach the prevalence that we see today. In order for growth to continue, new materials such as InGaAs will be needed, but the contact resistivity of these materials is troubles |
| 590 | |
▼a School code: 0070. |
| 650 | 4 |
▼a Materials science. |
| 650 | 4 |
▼a Engineering. |
| 650 | 4 |
▼a Electrical engineering. |
| 690 | |
▼a 0794 |
| 690 | |
▼a 0537 |
| 690 | |
▼a 0544 |
| 710 | 20 |
▼a University of Florida.
▼b Materials Science and Engineering. |
| 773 | 0 |
▼t Dissertation Abstracts International
▼g 79-11B(E). |
| 773 | |
▼t Dissertation Abstract International |
| 790 | |
▼a 0070 |
| 791 | |
▼a Ph.D. |
| 792 | |
▼a 2017 |
| 793 | |
▼a English |
| 856 | 40 |
▼u http://www.riss.kr/pdu/ddodLink.do?id=T15000397
▼n KERIS |
| 980 | |
▼a 201812
▼f 2019 |
| 990 | |
▼a 관리자
▼b 관리자 |