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020 ▼a 9780438120655
035 ▼a (MiAaPQ)AAI10902810
040 ▼a MiAaPQ ▼c MiAaPQ ▼d 248032
0491 ▼f DP
0820 ▼a 620.11
1001 ▼a Kennon, Ethan Lowell.
24510 ▼a Behavior of Highly Te doped InGaAs.
260 ▼a [S.l.] : ▼b University of Florida., ▼c 2017
260 1 ▼a Ann Arbor : ▼b ProQuest Dissertations & Theses, ▼c 2017
300 ▼a 165 p.
500 ▼a Source: Dissertation Abstracts International, Volume: 79-11(E), Section: B.
5021 ▼a Thesis (Ph.D.)--University of Florida, 2017.
520 ▼a The exponential growth of semiconductor technology has allowed it to reach the prevalence that we see today. In order for growth to continue, new materials such as InGaAs will be needed, but the contact resistivity of these materials is troubles
590 ▼a School code: 0070.
650 4 ▼a Materials science.
650 4 ▼a Engineering.
650 4 ▼a Electrical engineering.
690 ▼a 0794
690 ▼a 0537
690 ▼a 0544
71020 ▼a University of Florida. ▼b Materials Science and Engineering.
7730 ▼t Dissertation Abstracts International ▼g 79-11B(E).
773 ▼t Dissertation Abstract International
790 ▼a 0070
791 ▼a Ph.D.
792 ▼a 2017
793 ▼a English
85640 ▼u http://www.riss.kr/pdu/ddodLink.do?id=T15000397 ▼n KERIS
980 ▼a 201812 ▼f 2019
990 ▼a 관리자 ▼b 관리자