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020 ▼a 9780438091085
035 ▼a (MiAaPQ)AAI10871328
035 ▼a (MiAaPQ)OhioLINK:osu1419019102
040 ▼a MiAaPQ ▼c MiAaPQ ▼d 248032
0820 ▼a 621.3
1001 ▼a Karisan, Yasir.
24510 ▼a Full-wave Electromagnetic Modeling of Electronic Device Parasitics for Terahertz Applications.
260 ▼a [S.l.] : ▼b The Ohio State University., ▼c 2015
260 1 ▼a Ann Arbor : ▼b ProQuest Dissertations & Theses, ▼c 2015
300 ▼a 213 p.
500 ▼a Source: Dissertation Abstracts International, Volume: 79-10(E), Section: B.
500 ▼a Adviser: Kubilay Sertel.
5021 ▼a Thesis (Ph.D.)--The Ohio State University, 2015.
520 ▼a The unique spectroscopic utility and high spatial resolution of terahertz (THz) waves offer a new and vastly unexplored paradigm for novel sensing, imaging, and communication applications, varying from deep-space spectroscopy to security screeni
520 ▼a The main objective of this dissertation is to develop accurate lumped- and distributed-element equivalent circuits, and full-wave EM simulation-based iterative parameter extraction algorithms, to accurately model the extrinsic parasitics of elec
520 ▼a We next focus on three-terminal devices, and utilize full-wave EM simulation tools for characterization of extrinsic parasitics of millimeter-wave (mmW) HEMTs. Subsequently, we develop a lumped-element parasitic equivalent circuit model for HEMT
590 ▼a School code: 0168.
650 4 ▼a Electrical engineering.
690 ▼a 0544
71020 ▼a The Ohio State University. ▼b Electrical and Computer Engineering.
7730 ▼t Dissertation Abstracts International ▼g 79-10B(E).
773 ▼t Dissertation Abstract International
790 ▼a 0168
791 ▼a Ph.D.
792 ▼a 2015
793 ▼a English
85640 ▼u http://www.riss.kr/pdu/ddodLink.do?id=T15000200 ▼n KERIS
980 ▼a 201812 ▼f 2019
990 ▼a 관리자