MARC보기
LDR00000nmm u2200205 4500
001000000330327
00520241029141340
008181129s2018 ||| | | | eng d
020 ▼a 9780438360020
035 ▼a (MiAaPQ)AAI10843283
035 ▼a (MiAaPQ)purdue:23104
040 ▼a MiAaPQ ▼c MiAaPQ ▼d 248032
0491 ▼f DP
0820 ▼a 621.3
1001 ▼a Ferdous, Rifat.
24510 ▼a Spin-orbit Interaction and Electron Spin Qubits in Silicon Quantum Dots.
260 ▼a [S.l.] : ▼b Purdue University., ▼c 2018
260 1 ▼a Ann Arbor : ▼b ProQuest Dissertations & Theses, ▼c 2018
300 ▼a 88 p.
500 ▼a Source: Dissertation Abstracts International, Volume: 80-01(E), Section: B.
500 ▼a Advisers: Gerhard Klimeck
5021 ▼a Thesis (Ph.D.)--Purdue University, 2018.
520 ▼a Spin qubits hosted in electrostatic quantum dots (QD) in Silicon (Si) are among the most promising candidates for building a large-scale quantum computer. Quantum information encoded in electron spins can survive longer in Si due to the scarcity
520 ▼a Spin-orbit interaction (SOI) has previously been used to enable electrical manipulation of spins in other semiconductor materials. However, SOI is often ignored in Si as being small. Micro-magnets, that generate inhomogeneous magnetic field, hav
520 ▼a In this work, a significant SOI, which is essential to understand the spin properties Si QDs even in the presence of micro-magnets, is identified at the Si/SiGe or Si/SiO2 interface. Also the SOI is governed by the atomic scale details of the Si
520 ▼a A key figure of merit of a qubit is the dephasing time. In this work, a microscopic model of the spin dephasing in Si QDs are developed and recent experimental measurements are explained. SOI makes these qubits susceptible to the electrical nois
590 ▼a School code: 0183.
650 4 ▼a Electrical engineering.
690 ▼a 0544
71020 ▼a Purdue University. ▼b Electrical and Computer Engineering.
7730 ▼t Dissertation Abstracts International ▼g 80-01B(E).
773 ▼t Dissertation Abstract International
790 ▼a 0183
791 ▼a Ph.D.
792 ▼a 2018
793 ▼a English
85640 ▼u http://www.riss.kr/pdu/ddodLink.do?id=T14999919 ▼n KERIS
980 ▼a 201812 ▼f 2019
990 ▼a 관리자 ▼b 관리자