| LDR | | 00000nmm u2200205 4500 |
| 001 | | 000000330159 |
| 005 | | 20241024164325 |
| 008 | | 181129s2018 ||| | | | eng d |
| 020 | |
▼a 9780438017030 |
| 035 | |
▼a (MiAaPQ)AAI10748470 |
| 035 | |
▼a (MiAaPQ)purdue:22370 |
| 040 | |
▼a MiAaPQ
▼c MiAaPQ
▼d 248032 |
| 049 | 1 |
▼f DP |
| 082 | 0 |
▼a 621.3 |
| 100 | 1 |
▼a Shirazi-Hosseini-Dokht, Mohammad Ali. |
| 245 | 10 |
▼a Polar and Nonpolar III-Nitride Heterostructures for Near-Infrared Intersubband Materials and Devices. |
| 260 | |
▼a [S.l.] :
▼b Purdue University.,
▼c 2018 |
| 260 | 1 |
▼a Ann Arbor :
▼b ProQuest Dissertations & Theses,
▼c 2018 |
| 300 | |
▼a 127 p. |
| 500 | |
▼a Source: Dissertation Abstracts International, Volume: 79-10(E), Section: B. |
| 500 | |
▼a Adviser: Michael Manfra. |
| 502 | 1 |
▼a Thesis (Ph.D.)--Purdue University, 2018. |
| 520 | |
▼a III-nitride semiconductors are currently intensively studied for applications in infrared optoelectronics, such as detectors and emitters for spectral regions not easily accessible with other semiconductors. Owing to the large conduction band of |
| 520 | |
▼a We also investigate near-infrared intersubband transitions in high-Al content AlGaN/GaN superlattices using the nonpolar m-plane orientation. The nonpolar orientation lacks the polarization-induced internal electric field along c-axis that is no |
| 590 | |
▼a School code: 0183. |
| 650 | 4 |
▼a Electrical engineering. |
| 650 | 4 |
▼a Materials science. |
| 690 | |
▼a 0544 |
| 690 | |
▼a 0794 |
| 710 | 20 |
▼a Purdue University.
▼b Electrical and Computer Engineering. |
| 773 | 0 |
▼t Dissertation Abstracts International
▼g 79-10B(E). |
| 773 | |
▼t Dissertation Abstract International |
| 790 | |
▼a 0183 |
| 791 | |
▼a Ph.D. |
| 792 | |
▼a 2018 |
| 793 | |
▼a English |
| 856 | 40 |
▼u http://www.riss.kr/pdu/ddodLink.do?id=T14996988
▼n KERIS |
| 980 | |
▼a 201812
▼f 2019 |
| 990 | |
▼a 관리자
▼b 관리자 |