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019 ▼a 1252915733
020 ▼a 9781000404937 ▼q electronic book
020 ▼a 1000404935 ▼q electronic book
020 ▼a 9781003055723 ▼q electronic book
020 ▼a 1003055729 ▼q electronic book
020 ▼a 9781000404951 ▼q electronic book ▼q EPUB
020 ▼a 1000404951 ▼q electronic book ▼q EPUB
020 ▼z 0367519291
020 ▼z 9780367519292
035 ▼a 2915234 ▼b (N$T)
035 ▼a (OCoLC)1250512792 ▼z (OCoLC)1252915733
037 ▼a 9781003055723 ▼b Taylor & Francis
040 ▼a YDX ▼b eng ▼e rda ▼c YDX ▼d TYFRS ▼d OCLCO ▼d UKAHL ▼d OCLCF ▼d N$T ▼d YDXIT ▼d 248032
049 ▼a MAIN
050 4 ▼a TA405 ▼b .M35 2021
050 4 ▼a TA417.6
072 7 ▼a SCI ▼x 055000 ▼2 bisacsh
072 7 ▼a TEC ▼x 007000 ▼2 bisacsh
072 7 ▼a TEC ▼x 008010 ▼2 bisacsh
072 7 ▼a TJF ▼2 bicssc
08204 ▼a 620.1/123 ▼2 23
1001 ▼a Maiti, C. K., ▼e author.
24510 ▼a Stress and strain engineering at nanoscale in semiconductor devices / ▼c Chinmay K. Maiti.
264 1 ▼a Boca Raton, FL : ▼b CRC PRESS, ▼c 2021.
300 ▼a 1 online resource
336 ▼a text ▼b txt ▼2 rdacontent
337 ▼a computer ▼b c ▼2 rdamedia
338 ▼a online resource ▼b cr ▼2 rdacarrier
504 ▼a Includes bibliographical references and index.
520 ▼a Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.
5450 ▼a Professor Chinmay K. Maiti, PhD is an Ex-Professor and Ex-Head of Department from Indian Institute of Technology (IIT) - Kharagpur, India. He then joined the SOA University, Bhubaneswar in May 2015 as a Professor, where he is now on a Visiting Assignment. He is interested in strain-engineering in nanodevices, flexible electronics, and semiconductor device/process simulation research, and microelectronics education. He has published several monographs in Silicon-Germanium, heterostructure-Silicon, and Technology CAD areas. He has edited the "Selected Works of Professor Herbert Kroemer", World Scientific, Singapore, 2008.
588 ▼a Description based on online resource; title from digital title page (viewed on August 10, 2021).
590 ▼a WorldCat record variable field(s) change: 050, 082
650 0 ▼a Strains and stresses.
650 0 ▼a Semiconductors.
650 0 ▼a Nanoelectronics.
650 7 ▼a SCIENCE / Physics ▼2 bisacsh
650 7 ▼a TECHNOLOGY / Electricity ▼2 bisacsh
650 7 ▼a TECHNOLOGY / Electronics / Circuits / General ▼2 bisacsh
650 7 ▼a Nanoelectronics. ▼2 fast ▼0 (OCoLC)fst01741867
650 7 ▼a Semiconductors. ▼2 fast ▼0 (OCoLC)fst01112198
650 7 ▼a Strains and stresses. ▼2 fast ▼0 (OCoLC)fst01134288
655 4 ▼a Electronic books.
77608 ▼i Print version: ▼z 0367519291 ▼z 9780367519292 ▼w (OCoLC)1229141035
85640 ▼3 EBSCOhost ▼u https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=2915234
938 ▼a EBSCOhost ▼b EBSC ▼n 2915234
990 ▼a 관리자
994 ▼a 92 ▼b N$T