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▼a 1785616560 |
| 020 | |
▼a 9781785616563
▼q (electronic bk.) |
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▼z 9781785616556 |
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▼z 1785616552 |
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▼a 2345949
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▼a (OCoLC)1132297460 |
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▼d 248032 |
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▼a MAIN |
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▼a TK7871.85 |
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▼a 621.38152 |
| 245 | 00 |
▼a Characterisation and Control of Defects in Semiconductors /
▼c edited by Filip Tuomisto. |
| 260 | |
▼a Stevenage :
▼b The Institution of Engineering and Technology,
▼c 2019. |
| 300 | |
▼a 1 online resource (596 pages). |
| 336 | |
▼a text
▼b txt
▼2 rdacontent |
| 337 | |
▼a computer
▼b c
▼2 rdamedia |
| 338 | |
▼a online resource
▼b cr
▼2 rdacarrier |
| 490 | 1 |
▼a IET Materials, Circuits & Devices Series ;
▼v 45 |
| 520 | |
▼a The following topics are dealt with: semiconductor defect control; semiconductor doping; ion beam effects; ion implantation; elemental semiconductors; silicon; electrically active defects; point defect luminescence; vibrational spectroscopy; magnetic resonance methods; muons; positron annihilation spectroscopy; first principles methods; microscopy; 3D atomic-scale studies; ion beam modification; and ion beam analysis and channelling. |
| 588 | 0 |
▼a Online resource; title from PDF title page (IET Digital, viewed January 13, 2020). |
| 590 | |
▼a Master record variable field(s) change: 050 |
| 650 | 0 |
▼a Ion implantation. |
| 650 | 0 |
▼a Magnetic resonance. |
| 650 | 0 |
▼a Semiconductor doping. |
| 650 | 0 |
▼a Semiconductors
▼x Materials. |
| 650 | 0 |
▼a Silicon. |
| 650 | 7 |
▼a Ion implantation.
▼2 fast
▼0 (OCoLC)fst00978590 |
| 650 | 7 |
▼a Magnetic resonance.
▼2 fast
▼0 (OCoLC)fst01005777 |
| 650 | 7 |
▼a Semiconductor doping.
▼2 fast
▼0 (OCoLC)fst01112124 |
| 650 | 7 |
▼a Semiconductors
▼x Materials.
▼2 fast
▼0 (OCoLC)fst01112237 |
| 650 | 7 |
▼a Silicon.
▼2 fast
▼0 (OCoLC)fst01118631 |
| 650 | 7 |
▼a crystal defects.
▼2 inspect |
| 650 | 7 |
▼a ion beam effects.
▼2 inspect |
| 650 | 7 |
▼a ion implantation.
▼2 inspect |
| 650 | 7 |
▼a luminescence.
▼2 inspect |
| 650 | 7 |
▼a magnetic resonance.
▼2 inspect |
| 650 | 7 |
▼a microscopy.
▼2 inspect |
| 650 | 7 |
▼a positron annihilation.
▼2 inspect |
| 650 | 7 |
▼a semiconductor doping.
▼2 inspect |
| 650 | 7 |
▼a semiconductor materials.
▼2 inspect |
| 650 | 7 |
▼a silicon.
▼2 inspect |
| 653 | |
▼a semiconductor defects |
| 653 | |
▼a electrically active defects |
| 653 | |
▼a point defect luminescence |
| 653 | |
▼a vibrational spectroscopy |
| 653 | |
▼a magnetic resonance methods |
| 653 | |
▼a muons |
| 653 | |
▼a positron annihilation spectroscopy |
| 653 | |
▼a first principles methods |
| 653 | |
▼a microscopy |
| 653 | |
▼a 3D atomic-scale studies |
| 653 | |
▼a ion beam modification |
| 653 | |
▼a ion beam analysis |
| 653 | |
▼a channelling |
| 653 | |
▼a silicon |
| 653 | |
▼a elemental semiconductors |
| 653 | |
▼a ion implantation |
| 653 | |
▼a ion beam effects |
| 653 | |
▼a semiconductor doping |
| 655 | 4 |
▼a Electronic books. |
| 700 | 1 |
▼a Tuomisto, Filip,
▼e editor. |
| 830 | 0 |
▼a Materials, circuits and devices series ;
▼v 45. |
| 856 | 40 |
▼3 EBSCOhost
▼u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=2345949 |
| 938 | |
▼a ProQuest Ebook Central
▼b EBLB
▼n EBL6026414 |
| 938 | |
▼a EBSCOhost
▼b EBSC
▼n 2345949 |
| 990 | |
▼a 관리자 |
| 994 | |
▼a 92
▼b N$T |