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| 008 | | 180910s2018 xxk ob 001 0 eng d |
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▼a 1053582309 |
| 020 | |
▼a 9781785614927
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▼z 1785614916 |
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▼z 9781785614910 |
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▼a 1882218
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▼a (OCoLC)1051214848
▼z (OCoLC)1053582309 |
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▼b W36 2018eb |
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▼a TEC
▼x 009070
▼2 bisacsh |
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▼a B0100
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▼a B2560P
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▼a 621.38152
▼2 23 |
| 100 | 1 |
▼a Wang, Fei (Fred),
▼e author. |
| 245 | 10 |
▼a Characterization of wide bandgap power semiconductor devices /
▼c Fei (Fred) Wang, Zheyu Zhang, and Edward A. Jones. |
| 260 | |
▼a Stevenage, United Kingdom :
▼b Institution of Engineering and Technology,
▼c 2018. |
| 300 | |
▼a 1 online resource (ix, 333 pages). |
| 336 | |
▼a text
▼b txt
▼2 rdacontent |
| 337 | |
▼a computer
▼b c
▼2 rdamedia |
| 338 | |
▼a online resource
▼b cr
▼2 rdacarrier |
| 490 | 1 |
▼a IET Energy Engineering ;
▼v 128 |
| 504 | |
▼a Includes bibliographical references and index. |
| 505 | 0 |
▼a Intro; Contents; Biographies; Acknowledgments; 1. Introduction; 1.1. Overview of WBG devices; 1.1.1. WBG devices in comparison to Si devices; 1.1.2. WBG device status; 1.2. Motivation for WBG device characterization; 1.3. About this book; References; 2. Pulsed static characterization; 2.1. Fundamentals of pulsed I-V testing; 2.2. Test equipment description; 2.3. Test fixture selection/design; 2.4. Junction temperature control; 2.5. Cryogenic device testing; 2.6. Pulse waveform timing; 2.7. Output (Id-Vds) characteristic; 2.8. Transfer (Id-Vgs) characteristic |
| 505 | 8 |
▼a 2.9. Gate current (Ig,ss-Vgs) characteristic2.10. Drain-source leakage (Id,off-Vds) characteristic; 2.11. Summary; References; 3. Junction capacitance characterization; 3.1. Fundamentals of C-V testing; 3.2. Test equipment description; 3.3. Test fixture selection/design and calibration; 3.4. Output capacitance (Coss) characteristic; 3.5. Input capacitance (Ciss) characteristic; 3.6. Reverse transfer capacitance (Crss) characteristic; 3.7. Gate charge (Qg) characteristic; 3.8. Calculation of Coss-related switching energies; 3.9. Summary; References; 4. Fundamentals of dynamic characterization |
| 505 | 8 |
▼a 4.1. Switching commutation analysis4.2. Fundamentals of DPT; 4.3. DPT design; 4.3.1. Load inductor; 4.3.2. DC source; 4.3.3. DC capacitor; 4.3.4. Bleeder resistor; 4.4. DPT control; 4.5. Case study; 4.5.1. Load inductor; 4.5.2. DC source; 4.5.3. DC capacitor bank; 4.5.4. Bleeder resistor; 4.5.5. DPT control; 4.6. Summary; References; 5. Gate drive for dynamic characterization; 5.1. Gate drive fundamentals; 5.2. Gate drive-related key device characteristics; 5.2.1. Gate drive design considering device static characteristics; 5.2.2. Gate drive design considering device dynamic characteristics |
| 505 | 8 |
▼a 5.3. Gate drive design5.3.1. Signal isolator; 5.3.2. Isolated power supply; 5.3.3. Gate drive IC; 5.3.4. Gate resistor; 5.3.5. Decoupling capacitor; 5.4. Case study; 5.4.1. Signal isolator; 5.4.2. Isolated power supply; 5.4.3. Gate drive IC; 5.4.4. Gate resistor; 5.4.5. Decoupling capacitor; 5.5. Summary; References; 6. Layout design and parasitic management; 6.1. Impact of parasitics on the switching performance; 6.1.1. Gate loop parasitics; 6.1.2. Power loop parasitics; 6.1.3. Common parasitics; 6.2. DPT layout design; 6.3. Case study; 6.3.1. Brief overview of WBG devices' package |
| 505 | 8 |
▼a 6.3.2. Case study 1: TO-247 package SiC MOSFETs6.3.3. Case study 2: surface-mount WBG device; 6.3.4. With consideration of current measurement in DPT; 6.3.5. Gate drive; 6.4. Summary; References; 7. Protection design for double pulse test; 7.1. Overview of state-of-the-art protection scheme for WBG devices; 7.2. Solid-state circuit breaker; 7.2.1. Operation principle; 7.2.2. Circuit implementation and design consideration; 7.2.3. Test setup and procedure; 7.2.4. Case study; 7.3. Consideration for high-voltage WBG device DPT; 7.3.1. Safety consideration; 7.3.2. Protection scheme; 7.4. Summary |
| 520 | |
▼a This book is an authoritative overview of Wide Bandgap (WBG) device characterization providing essential tools to assist the reader in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors. |
| 588 | 0 |
▼a Online resource; Title from pdf title page (IET Digital Library, viewed September 10, 2018). |
| 590 | |
▼a Master record variable field(s) change: 072 |
| 650 | 0 |
▼a Wide gap semiconductors. |
| 650 | 0 |
▼a Power semiconductors. |
| 650 | 0 |
▼a Electric capacity. |
| 650 | 7 |
▼a TECHNOLOGY & ENGINEERING / Mechanical.
▼2 bisacsh |
| 655 | 4 |
▼a Electronic books. |
| 700 | 1 |
▼a Zhang, Zheyu,
▼e author. |
| 700 | 1 |
▼a Jones, Edward A.,
▼c (Engineer),
▼e author. |
| 776 | 08 |
▼i Print version:
▼a WANG, FEI. ZHANG, ZHEYU. JONES, EDWARD A.
▼t CHARACTERIZATION OF WIDE BANDGAP POWER SEMICONDUCTOR DEVICES.
▼d [S.l.] : INST OF ENGIN AND TECH, 2018
▼z 1785614916
▼w (OCoLC)1022475837 |
| 830 | 0 |
▼a IET energy engineering series ;
▼v 128. |
| 856 | 40 |
▼3 EBSCOhost
▼u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=1882218 |
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▼a YBP Library Services
▼b YANK
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▼a 92
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