| LDR | | 06022cmm u2200625Ii 4500 |
| 001 | | 000000312466 |
| 003 | | OCoLC |
| 005 | | 20230525152326 |
| 006 | | m d |
| 007 | | cr cnu|||unuuu |
| 008 | | 180716s2018 xx o 000 0 eng d |
| 019 | |
▼a 1045558988 |
| 020 | |
▼a 9781315100425
▼q (electronic bk.) |
| 020 | |
▼a 1315100428
▼q (electronic bk.) |
| 020 | |
▼z 9789814774376 |
| 020 | |
▼a 9781351586061 |
| 020 | |
▼a 1351586068 |
| 035 | |
▼a 1847771
▼b (N$T) |
| 035 | |
▼a (OCoLC)1044733832
▼z (OCoLC)1045558988 |
| 040 | |
▼a N$T
▼b eng
▼e rda
▼e pn
▼c N$T
▼d N$T
▼d EBLCP
▼d MERER
▼d OCLCF
▼d OCLCQ
▼d S9I
▼d 248032 |
| 049 | |
▼a MAIN |
| 050 | 4 |
▼a QC611.8.A5 |
| 072 | 7 |
▼a SCI
▼x 021000
▼2 bisacsh |
| 072 | 7 |
▼a SCI
▼x 022000
▼2 bisacsh |
| 072 | 7 |
▼a TJF
▼2 bicscc |
| 082 | 04 |
▼a 537.622
▼2 23 |
| 100 | 1 |
▼a Popov, Anatoly,
▼d 1944-,
▼e author. |
| 245 | 10 |
▼a Disordered Semiconductors :
▼b Physics and Applications. |
| 250 | |
▼a Second edition. |
| 260 | |
▼a [Place of publication not identified] :
▼b Pan Stanford,
▼c 2018. |
| 300 | |
▼a 1 online resource. |
| 336 | |
▼a text
▼b txt
▼2 rdacontent |
| 337 | |
▼a computer
▼b c
▼2 rdamedia |
| 338 | |
▼a online resource
▼b cr
▼2 rdacarrier |
| 347 | |
▼a data file
▼2 rda |
| 504 | |
▼a Includes bibliographical references and index. |
| 505 | 0 |
▼a Cover; Half title; Title; Published; Contents; Preface; Preface to the First Edition; Chapter 1. Introduction; 1.1 Definition of Disordered State; 1.2 Classification of Non-crystalline Systems; 1.3 Qualitative and Quantitative Characteristics of Glass Formation; Chapter 2. Atomic Structure of Disordered Semiconductors; 2.1 Structural Characteristics of Solids; 2.2 Short-Range and Medium-Range Order; 2.3 Methods of Investigation of Disordered System Structure; 2.4 Simulation of Disordered Material Structure; 2.5 Results of Structural Research of Disordered Semiconductors |
| 505 | 8 |
▼a 2.5.1 Atomic Structure of Non-crystalline Selenium2.5.2 Atomic Structure of Chalcogenide Glasses; 2.5.3 Atomic Structure of Amorphous Silicon; 2.5.4 Structure of Carbon-Based Amorphous and Nanocomposite Films; 2.5.5 Structure of Organic Semiconductors; Chapter 3. Electronic Structure and Properties of Disordered Semiconductors; 3.1 Electronic Structure; 3.1.1 Localized States in Disordered Semiconductors; 3.1.2 Models of Energy Bands; 3.1.3 Defect States in Disordered Semiconductors; 3.1.4 Electronic Structure of Hydrogenated Amorphous Silicon |
| 505 | 8 |
▼a 3.1.5 Electronic Structure of Organic Semiconductors3.2 Electrical Properties of Disordered Semiconductors; 3.2.1 Electrical Conductivity; 3.2.1.1 Conductivity in extended states; 3.2.1.2 Conductivity in the tails of bands; 3.2.1.3 Conductivity in localized states at the Fermi level; 3.2.2 Thermoelectric Power; 3.2.3 Hall Effect Anomaly; 3.2.4 Time of Flight Method; 3.2.5 Features of the Charge Carrier Transport in Organic Semiconductors; 3.3 Optical Properties of Disordered Semiconductors; 3.4 Photoelectrical Properties of Disordered Semiconductors; 3.4.1 Dependence on Light Flux Intensity |
| 505 | 8 |
▼a 3.4.2 Dependence on Spectral Characteristics3.4.3 Dependence on Temperature; 3.4.4 Dependence on Electric Field Intensity; Chapter 4. Methods for Controlling Properties of Disordered Semiconductors; 4.1 Doping of Hydrogenated Amorphous Silicon; 4.2 Chemical Modification of Chalcogenide Glassy Semiconductor Film Properties; 4.3 Conductivity Type Inversion in Bulk Glassy Chalcogenide; 4.4 Structural Modification of Disordered Semiconductors Properties; 4.4.1 Structural Modification at the Level of Short-Range Order; 4.4.2 Structural Modification at the Medium-Range-Order Level |
| 505 | 8 |
▼a 4.4.3 Structural Modification at the Morphology/Heterogeneity Level4.4.5 Correlation between Structural Modification and Stability of Material Properties and Device Parameters; 4.4.4 Structural Modification at the Defect Subsystem Level; 4.5 Chemical Modification of the Atomic Structure of Disordered Semiconductors; 4.6 Structural, Chemical, and Phase Modification of Amorphous Diamond-Like Silicon-Carbon Films; 4.6.1 Structural Modification of ASCFs; 4.6.2 Chemical and Phase Modification of ASCF; 4.6.3 Nanostructuring of ASCF; Chapter 5. Preparation Methods of Disordered Semiconductor Films |
| 520 | 3 |
▼a Devices based on disordered semiconductors have wide applications. It is difficult to imagine modern life without printers and copiers, LCD monitors and TVs, optical disks, economical solar cells, and many other devices based on disordered semiconductors. However, nowadays books that discuss disordered (amorphous, nanocrystalline, microcrystalline) semiconductors focus, as a rule, on either physics of materials or physics of devices that are based on these materials. This book connects characteristic features of the atomic and electronic structures of disordered semiconductors and the device design process on the basis of these materials. Compared with the first edition, this book takes into account the latest developments of disordered semiconductors and devices. It has new sections on the structures of carbon-based amorphous and nanocomposite films and atomic and electronic structures of organic semiconductors. |
| 588 | 0 |
▼a Online resource; title from PDF title page (EBSCO, viewed July 17, 2018). |
| 590 | |
▼a Master record variable field(s) change: 072 |
| 650 | 0 |
▼a Amorphous semiconductors. |
| 650 | 7 |
▼a SCIENCE / Physics / Electricity.
▼2 bisacsh |
| 650 | 7 |
▼a SCIENCE / Physics / Electromagnetism.
▼2 bisacsh |
| 650 | 7 |
▼a Amorphous semiconductors.
▼2 fast
▼0 (OCoLC)fst00807849 |
| 655 | 4 |
▼a Electronic books. |
| 655 | 0 |
▼a Electronic books. |
| 776 | 08 |
▼i Print version:
▼a Popov, Anatoly
▼t Disordered Semiconductors Second Edition : Physics and Applications
▼d Milton : Pan Stanford Publishing,c2018
▼z 9789814774376 |
| 856 | 40 |
▼3 EBSCOhost
▼u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=1847771 |
| 938 | |
▼a EBSCOhost
▼b EBSC
▼n 1847771 |
| 938 | |
▼a EBL - Ebook Library
▼b EBLB
▼n EBL5450889 |
| 990 | |
▼a 관리자 |
| 994 | |
▼a 92
▼b N$T |