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Resistive Switching Effects of Vanadium Pentoxide Thin Film

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개인저자Wan, Zhenni.
단체저자명University of Washington. Engineering.
서명/저자사항Resistive Switching Effects of Vanadium Pentoxide Thin Film.
발행사항[S.l.] : University of Washington., 2018
발행사항Ann Arbor : ProQuest Dissertations & Theses, 2018
형태사항114 p.
소장본 주기School code: 0250.
ISBN9780355850703
일반주기 Source: Dissertation Abstracts International, Volume: 79-09(E), Section: B.
Advisers: Manjeri Anantram
이용제한사항This item is not available from ProQuest Dissertations & Theses.
요약In this Ph.D. work, the resistive switching effects of vanadium pentoxide (V2O5) thin films are extensively explored and investigated. Contrary to conventional Flash memory devices where the information is stored by the electrons in the floating
요약Both reversible and irreversible resistive switching are discovered for the first time in V2O5 based MIM devices and the switching effects are studied as a function of metal contacts and environment, which play an important role in determining t
요약V2O5 xerogel film synthesized by sol-gel process experiences drastic atomic structural change during post annealing process, resulting in significant impact on resistive switching characteristics. X-ray diffraction analysis reveals that -phase V
요약In order to make the synthesis of V짭2O5 thin film more compatible with modern IC fabrication processes, thermal evaporation is employed for V2O5 deposition. Reversible bipolar switching is preserved and the stability of I-V characteristics over
일반주제명Electrical engineering.
Materials science.
Physics.
언어영어
기본자료 저록Dissertation Abstracts International79-09B(E).
Dissertation Abstract International
대출바로가기http://www.riss.kr/pdu/ddodLink.do?id=T14997143

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