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Cryogenic Measurement of Gate-defined Quantum Dots in Si/SiGe Heterostructures for Quantum Computation

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개인저자Knapp, Trevor J.
단체저자명The University of Wisconsin - Madison. Physics.
서명/저자사항Cryogenic Measurement of Gate-defined Quantum Dots in Si/SiGe Heterostructures for Quantum Computation.
발행사항[S.l.] : The University of Wisconsin - Madison., 2018
발행사항Ann Arbor : ProQuest Dissertations & Theses, 2018
형태사항107 p.
소장본 주기School code: 0262.
ISBN9780438270084
일반주기 Source: Dissertation Abstracts International, Volume: 79-12(E), Section: B.
Adviser: Mark A. Eriksson.
요약This thesis describes work towards building a quantum computer out of gate-defined quantum dots in Si/SiGe heterostructures and primarily addresses two of the DiVencenzo criteria: scalability and measurement.
요약Chapters one and two provide an introduction to quantum computation and top-gated semiconductor quantum dots, with notes about the fabrication of quantum dots, modeling quantum dots with a simple capacitor model, the theory of Coulomb blockade t
요약Chapter three presents data from characterization of the first quantum dot in a Si/SiGe nanomembrane, a new material that may have applications for the scalability of Si/SiGe quantum dots. Previous to the work presented in chapter three, all gat
요약Chapter four provides a practical guide to cryogenic amplification, which has been used to improve charge-sensing measurements inside a dilution refrigerator. The chapter first provides a brief outline of different cryogenic amplification techni
요약Chapter five presents a study in how to improve heat sinking of a cryogenic amplifier in a dilution refrigerator so as to mitigate its detrimental impact on a nearby quantum dot. While the power consumption of a cryogenic amplifier can cause a s
일반주제명Physics.
언어영어
기본자료 저록Dissertation Abstracts International79-12B(E).
Dissertation Abstract International
대출바로가기http://www.riss.kr/pdu/ddodLink.do?id=T15000882

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