자료유형 | E-Book |
---|---|
개인저자 | Srivastava, Ashok, (College teacher), editor. Mohanty, Saraju P., editor. |
서명/저자사항 | Advanced technologies for next generation integrated circuits /edited by Ashok Srivastava and Saraju P. Mohanty. |
발행사항 | London, United Kingdom : The Institution of Engineering and Technology, 2020. |
형태사항 | 1 online resource (xii, 307 pages) : illustrations |
총서사항 | Materials, Circuits and Devices Ser. |
소장본 주기 | Added to collection customer.56279.3 |
ISBN | 9781785616655 178561665X |
서지주기 | Includes bibliographical references and index (pages 299-307). |
내용주기 | Graphene and other than graphene materials technology and beyond / Ashok Srivastava -- Emerging graphene-compatible biomaterials / Hindumathi R. Dhanasekaran, Jagannatham Madiga, Chandra P. Sharma and Prathap Haridoss -- Single electron devices : concept to realization / Boddepalli Santhibhushan, Anurag Srivastava, Anu and Mohammad Shahid Khan -- Applications of density functional theory (DFT) for emerging materials and interconnects / Kazi Muhammad Mohsin and Ashok Srivastava -- Memristor devices and memristor-based circuits / Venkata P. Yanambaka, Saraju P. Mohanty, Elias Kougianos and Dhruva Ghai -- Organic-inorganic heterojunctions for optoelectronic applications / Chandra Shaker Pathak, Jitendra Pratap Singh and Rajendra Singh -- Emerging high-[kappa] dielectrics for nanometer CMOS technologies and memory devices / Durgamadhab (Durga) Misra, Md Nasir Uddin Bhuyian, Yi Ming Ding, Kolla Lakshmi Ganapati and Navakanta Bhat -- Technology and modeling of DNTT organic thin-film transistors / Sushil Kumar Jain, Amit Mahesh Joshi and Arun Dev Dhar Dwivedi -- Doping-free tunnelling transistors : technology and modelling / Chitrakant Sahu and Avinash Lahgere -- Tunnel junctions to tunnel field-effect transistors : technologies, current transport models, and integration / Ashok Srivastava and Muhammad Shamiul Fahad -- Low-dimension materials-based interlayer tunnel field-effect transistors : technologies, current transport models, and integration / Muhammad Shamiul Fahad and Ashok srivastava -- Molybdenum disulfide-boron nitride junctionless tunnel effect transistor / Ashok Srivastava and Muhammad Shamiul Fahad. |
요약 | Novel devices with the potential to provide alternatives to existing nanometer CMOS technology are the subject of research in the fields of electronic materials and electronic design automation. This book explores the materials and design requirements of emerging integrated circuit technologies, and outlines their prospective applications. |
일반주제명 | Interconnects (Integrated circuit technology) Interconnects (Integrated circuit technology) bio-inspired materials. boron compounds. CMOS memory circuits. density functional theory. graphene. graphene devices. high-k dielectric thin films. III-V semiconductors. integrated circuit interconnections. integrated circuit modelling. integrated optoelectronics. junctionless nanowire transistors. memristor circuits. memristors. molybdenum compounds. nanoelectronics. semiconductor heterojunctions. single electron devices. thin film transistors. tunnel field-effect transistors. wide band gap semiconductors. |
언어 | 영어 |
기타형태 저록 | Print version:Advanced technologies for next generation integrated circuits.[Place of publication not identified] INST OF ENGIN AND TECH, 20201785616641 |
대출바로가기 | http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=2489269 |
인쇄
No. | 등록번호 | 청구기호 | 소장처 | 도서상태 | 반납예정일 | 예약 | 서비스 | 매체정보 |
---|---|---|---|---|---|---|---|---|
1 | WE00018679 | 621.3815 | 가야대학교/전자책서버(컴퓨터서버)/ | 대출가능 |