| LDR | | 05406cmm u2201057Mi 4500 |
| 001 | | 000000309977 |
| 003 | | OCoLC |
| 005 | | 20230525135129 |
| 006 | | m o d |
| 007 | | cr |n||||||||| |
| 008 | | 160513s2016 enk fob 001 0 eng d |
| 019 | |
▼a 959649427
▼a 960493800
▼a 960707837
▼a 961205222
▼a 961407854 |
| 020 | |
▼a 9781849199988 |
| 020 | |
▼a 1849199981 |
| 020 | |
▼a 9781849199971 |
| 020 | |
▼a 1849199973 |
| 029 | 1 |
▼a AU@
▼b 000058458253 |
| 029 | 1 |
▼a CHVBK
▼b 480083061 |
| 029 | 1 |
▼a CHBIS
▼b 010875984 |
| 035 | |
▼a (OCoLC)953455587
▼z (OCoLC)959649427
▼z (OCoLC)960493800
▼z (OCoLC)960707837
▼z (OCoLC)961205222
▼z (OCoLC)961407854 |
| 040 | |
▼a OTZ
▼b eng
▼e pn
▼c OTZ
▼d OCLCO
▼d OCLCF
▼d CN3GA
▼d COO
▼d OCLCQ
▼d S4S
▼d YDX
▼d N$T
▼d VT2
▼d 248032 |
| 049 | |
▼a MAIN |
| 050 | 4 |
▼a TK7871.99.M44
▼b N36 2016 |
| 072 | 7 |
▼a B0100
▼2 inspec |
| 072 | 7 |
▼a B1295
▼2 inspec |
| 072 | 7 |
▼a B1265B
▼2 inspec |
| 072 | 7 |
▼a B2570D
▼2 inspec |
| 072 | 7 |
▼a B2220E
▼2 inspec |
| 072 | 7 |
▼a B0240
▼2 inspec |
| 072 | 7 |
▼a B2120
▼2 inspec |
| 072 | 7 |
▼a B2550F
▼2 inspec |
| 072 | 7 |
▼a B0587
▼2 inspec |
| 072 | 7 |
▼a B2230F
▼2 inspec |
| 072 | 7 |
▼a B2560R
▼2 inspec |
| 072 | 7 |
▼a B1265M
▼2 inspec |
| 072 | 7 |
▼a B2130
▼2 inspec |
| 072 | 7 |
▼a B2810
▼2 inspec |
| 072 | 7 |
▼a B0170N
▼2 inspec |
| 072 | 7 |
▼a B2570A
▼2 inspec |
| 072 | 7 |
▼a C0000
▼2 inspec |
| 072 | 7 |
▼a C5137
▼2 inspec |
| 072 | 7 |
▼a C1140
▼2 inspec |
| 072 | 7 |
▼a C5190
▼2 inspec |
| 072 | 7 |
▼a TEC
▼x 009070
▼2 bisacsh |
| 082 | 04 |
▼a 620.5
▼2 23 |
| 245 | 00 |
▼a Nano-CMOS and Post-CMOS Electronics :
▼b Devices and Modelling /
▼c Mohanty & Srivastava (eds). |
| 260 | |
▼a Stevenage :
▼b IET,
▼c 2016. |
| 300 | |
▼a 1 online resource (pages). |
| 336 | |
▼a text
▼b txt
▼2 rdacontent |
| 337 | |
▼a computer
▼b c
▼2 rdamedia |
| 338 | |
▼a online resource
▼b cr
▼2 rdacarrier |
| 490 | 1 |
▼a Materials, Circuits & Devices |
| 504 | |
▼a Includes bibliographical references at the end of each chapters and index. |
| 520 | |
▼a The demand for ever smaller and portable electronic devices has driven metal oxide semiconductor-based (CMOS) technology to its physical limit with the smallest possible feature sizes. This presents various size-related problems such as high power leakage, low-reliability, and thermal effects, and is a limit on further miniaturization. To enable even smaller electronics, various nanodevices including carbon nanotube transistors, graphene transistors, tunnel transistors and memristors (collectively called post-CMOS devices) are emerging that could replace the traditional and ubiquitous silicon transistor. This book explores these nanoelectronics at the device level including modelling and design. Topics covered include high-k dielectrics; high mobility n and p channels on gallium arsenide and silicon substrates using interfacial misfit dislocation arrays; anodic metal-insulator-metal (MIM) capacitors; graphene transistors; junction and doping free transistors; nanoscale gigh-k/metal-gate CMOS and FinFET based logic libraries; multiple-independent-gate nanowire transistors; carbon nanotubes for efficient power delivery; timing driven buffer insertion for carbon nanotube interconnects; memristor modeling; and neuromorphic devices and circuits. This book is essential reading for researchers, research-focused industry designers/developers, and advanced students working on next-generation electronic devices and circuits. |
| 590 | |
▼a eBooks on EBSCOhost
▼b All EBSCO eBooks |
| 650 | 0 |
▼a Capacitors. |
| 650 | 0 |
▼a Digital integrated circuits. |
| 650 | 0 |
▼a Field-effect transistors. |
| 650 | 0 |
▼a Gallium arsenide. |
| 650 | 0 |
▼a Integrated circuits. |
| 650 | 0 |
▼a Integrated circuits
▼x Reliability. |
| 650 | 0 |
▼a Mathematical models. |
| 650 | 0 |
▼a Microprocessors. |
| 650 | 0 |
▼a Nanoelectronics. |
| 650 | 0 |
▼a Neural computers. |
| 650 | 0 |
▼a Semiconductors. |
| 650 | 0 |
▼a Systems on a chip. |
| 650 | 0 |
▼a Thin film devices. |
| 650 | 7 |
▼a Capacitors.
▼2 fast
▼0 (OCoLC)fst00846199 |
| 650 | 7 |
▼a Digital integrated circuits.
▼2 fast
▼0 (OCoLC)fst00893692 |
| 650 | 7 |
▼a Field-effect transistors.
▼2 fast
▼0 (OCoLC)fst00923928 |
| 650 | 7 |
▼a Gallium arsenide.
▼2 fast
▼0 (OCoLC)fst00937273 |
| 650 | 7 |
▼a Integrated circuits.
▼2 fast
▼0 (OCoLC)fst00975535 |
| 650 | 7 |
▼a Integrated circuits
▼x Reliability.
▼2 fast
▼0 (OCoLC)fst00975588 |
| 650 | 7 |
▼a Mathematical models.
▼2 fast
▼0 (OCoLC)fst01012085 |
| 650 | 7 |
▼a Microprocessors.
▼2 fast
▼0 (OCoLC)fst01020008 |
| 650 | 7 |
▼a Nanoelectronics.
▼2 fast
▼0 (OCoLC)fst01741867 |
| 650 | 7 |
▼a Neural computers.
▼2 fast
▼0 (OCoLC)fst01036251 |
| 650 | 7 |
▼a Semiconductors.
▼2 fast
▼0 (OCoLC)fst01112198 |
| 650 | 7 |
▼a Systems on a chip.
▼2 fast
▼0 (OCoLC)fst01141473 |
| 650 | 7 |
▼a Thin film devices.
▼2 fast
▼0 (OCoLC)fst01150011 |
| 650 | 7 |
▼a TECHNOLOGY & ENGINEERING / Mechanical
▼2 bisacsh |
| 655 | 4 |
▼a Electronic books. |
| 700 | 1 |
▼a Mohanty, Saraju P.,
▼e editor. |
| 700 | 1 |
▼a Srivastava, Ashok,
▼e editor. |
| 776 | 08 |
▼i Print version:
▼t Nano-CMOS and post-CMOS electronics : devices and modelling.
▼d London, England : The Institution of Engineering and Technology, 짤2016
▼h xiv, 368 pages
▼k Materials, circuits and devices series ; 29
▼z 9781849199971 |
| 830 | 0 |
▼a Materials, Circuits & Devices. |
| 856 | 40 |
▼u http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=1239687 |
| 938 | |
▼a YBP Library Services
▼b YANK
▼n 12999013 |
| 938 | |
▼a YBP Library Services
▼b YANK
▼n 13018775 |
| 938 | |
▼a EBSCOhost
▼b EBSC
▼n 1239687 |
| 990 | |
▼a 관리자 |